Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

934061078135

Nexperia

PMD9050D,165

Nexperia

934063583135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062307235

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

210

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

TO-236AB

934068118115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934065748115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTD143ETVL

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

934062966215

Nexperia

PQMD2,147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934069047215

Nexperia

PNP

SINGLE

YES

200 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

30 V

DUAL

R-PDSO-G3

TO-236AB

934062302215

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

NHDTC123JT

Nexperia

TIN

1

e3

30

260

AEC-Q101

934065888315

Nexperia

TIN

1

e3

30

260

AEC-Q101

NHUMD2

Nexperia

TIN

1

e3

30

260

AEC-Q101

NHUMB13

Nexperia

TIN

1

e3

30

260

934061069115

Nexperia

934062982215

Nexperia

NPN

DARLINGTON

YES

220 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

150 Cel

SILICON

60 V

DUAL

R-PDSO-G3

TO-236AB

934069747147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

PBRP113ET,235

Nexperia

934062898115

Nexperia

934069784135

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

934069719135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

NHUMD10

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.35 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT IN BAIS RESISTOR RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

934069133115

Nexperia

934061307135

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

934069709135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934058411215

Nexperia

934070726135

Nexperia

934067252135

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTB114EUX

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

140 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PIMD2,135

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTANCE RATIO IS 1

IEC-60134

934062856115

Nexperia

934069991215

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934057289135

Nexperia

TIN

1

e3

30

260

934066891115

Nexperia

TIN

1

e3

30

260

AEC-Q101

934070946235

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934061419115

Nexperia

TIN

1

e3

30

260

AEC-Q101

934057318135

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

40

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

934069265147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934061927115

Nexperia

934057162315

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062894115

Nexperia

934069148147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934068722147

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

45 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934069653115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934055049135

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR

e3

30

260

AEC-Q101

934063002215

Nexperia

934062961215

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

65 V

DUAL

R-PDSO-G3

TO-236AB

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395