Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCP55-10TF

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTA124EQC

Nexperia

1

30

260

PBSS4032NX,120

Nexperia

NPN

SINGLE

YES

145 MHz

2.5 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.34 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

65 pF

SILICON

30 V

-55 Cel

SINGLE

R-PSSO-F3

COLLECTOR

AEC-Q101; IEC-60134

PBHV9040Z/ZLF

Nexperia

PNP

SINGLE

YES

55 MHz

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

SILICON

400 V

DUAL

R-PDSO-G4

COLLECTOR

PMBT3946YPN,135

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

40 V

70 ns

250 ns

TIN

DUAL

R-PDSO-G6

1

e3

30

260

BC847C/AU

Nexperia

PBSS5160PAPSX

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

125 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

2

6

SMALL OUTLINE

70

SILICON

60 V

TIN

DUAL

S-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PUMD10-Q

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

BC847BQB

Nexperia

TIN

1

e3

30

260

BC859CW/ZL

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

SILICON

30 V

DUAL

R-PDSO-G3

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

PDTC115TE,135

Nexperia

PUMD6/ZLF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR

e3

30

260

BC857B-QR

Nexperia

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

4.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC817RA,147

Nexperia

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

BC857CQC

Nexperia

1

30

260

BC857CQA,147

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PUMD10/ZLH

Nexperia

TIN

1

e3

30

260

BCV61A/C

Nexperia

PDTA144EQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC807-40/DG

Nexperia

PUMD9-Q

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

PUMD2/ZL

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

PUMH13/ZLX

Nexperia

TIN

1

e3

30

260

PDTC143EQC-Q

Nexperia

1

30

260

AEC-Q101

PBHV9414ZX

Nexperia

PNP

SINGLE

YES

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

140 V

DUAL

R-PDSO-G4

1

COLLECTOR

30

260

AEC-Q101; IEC-60134

PBSS4260PANPSX

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

2

6

SMALL OUTLINE

50

SILICON

60 V

TIN

DUAL

S-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS4260PAN,115

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

2

6

SMALL OUTLINE

50

SILICON

60 V

TIN

DUAL

S-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTA143XQB

Nexperia

TIN

1

e3

30

260

PBSS4350SPN,118

Nexperia

PDTC114YQC-Q

Nexperia

1

30

260

AEC-Q101

PMBT3906/DG215

Nexperia

TIN

1

30

260

BC817RAPNZ

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC144EQC

Nexperia

1

30

260

PZTA42/ZLX

Nexperia

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

300 V

DUAL

R-PDSO-G4

COLLECTOR

PBSS5260QAX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTC123TK,135

Nexperia

BC807-16W-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTA143ET,235

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.15 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

3 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC847CW/SN

Nexperia

TIN

1

e3

30

260

PBSS4350SSJ

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

120

SILICON

50 V

104 ns

520 ns

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

e4

30

260

PBSS4041PX,135

Nexperia

BCX55-16,146

Nexperia

BC817-25W/MI

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCP53H

Nexperia

TIN

1

e3

30

260

PBSS5250XZ

Nexperia

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

50 V

Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

PDTC143EQB

Nexperia

TIN

1

e3

30

260

PBSS5350THR

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCX54-10,146

Nexperia

NPN

SINGLE

YES

180 MHz

1.35 W

1 A

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

63

150 Cel

SILICON

45 V

-55 Cel

DUAL

R-PSSO-G3

COLLECTOR

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395