Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC857BSH-Q

Nexperia

1

30

260

AEC-Q101

PBSS5260PAPSX

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

2

6

SMALL OUTLINE

50

SILICON

60 V

TIN

DUAL

S-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC857AW-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

3 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PDTA143EQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC817-40QB-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMH13/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTC123TU,135

Nexperia

BC846W-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

150 Cel

3 pF

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

BC857W-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

3 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

PBHV9540X

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMH9/ZLX

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

BC807,235

Nexperia

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

BC846BPNH

Nexperia

TIN

1

e3

30

260

PBSS4260QAX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC847RAZ

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-40W-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BCX51-10T

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTC143ZQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

AEC-Q101; IEC-60134

PBSS5140T,235

Nexperia

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

40 V

DUAL

R-PDSO-G3

TO-236AB

BC857AQC

Nexperia

1

30

260

BC847AQA,147

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.28 W

110

SILICON

45 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PUMD2/ZLZ

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

BCM847BS/ZLF

Nexperia

TIN

1

e3

30

260

BCX51,146

Nexperia

BC846AQC

Nexperia

TIN

1

e3

30

260

PDTA144EU/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC856BQB-Q

Nexperia

1

30

260

AEC-Q101

PMST3904/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBHV9115TLH

Nexperia

PNP

SINGLE

YES

55 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

150 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC846BSH

Nexperia

TIN

1

e3

30

260

BCP53-16/A

Nexperia

BC807-40W/MIX

Nexperia

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

BCM857BSH

Nexperia

TIN

1

e3

30

260

PDTA124XQC

Nexperia

1

30

260

PDTC124EQB

Nexperia

TIN

1

e3

30

260

PBSS5140T/DG

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCX51TF

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BCM857BSH-Q

Nexperia

1

30

260

AEC-Q101

BC807K-40

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCX55-10,135

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

SILICON

60 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

AEC-Q101; IEC-60134

PDTC114TU,135

Nexperia

PBSS4160DPN,125

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

220 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

60 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

IEC-60134

BC850CW/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PMBTA06-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC857BQA,147

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

45 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTC143ZE,135

Nexperia

BC847AQC

Nexperia

TIN

1

e3

30

260

BC846S/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395