Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PDTA124XE,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 2.1

PDTA114EU/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PZTA14/ZLX

Nexperia

NPN

DARLINGTON

YES

125 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20000

SILICON

DUAL

R-PDSO-G4

COLLECTOR

BC51PASX

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

45 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTC114YUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

BC857BQAZ

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

45 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC857BQC-Q

Nexperia

1

30

260

AEC-Q101

BCW66FVL

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMBT3946YPN,165

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

40 V

70 ns

250 ns

TIN

DUAL

R-PDSO-G6

1

e3

30

260

BC847QAPN,147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

45 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP54-10,115

Nexperia

NPN

SINGLE

YES

180 MHz

1.35 W

1 A

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847BW/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBSS5240TVL

Nexperia

PNP

SINGLE

YES

200 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

PBRN123ES,412

Nexperia

BCP52-10TF

Nexperia

1

30

260

AEC-Q101

BCP56-10T

Nexperia

NPN

SINGLE

YES

155 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC856BS/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBSS5140T/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PMBTA42/DG215

Nexperia

BC857BW-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

3 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PDTA114YQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

BCP51/A

Nexperia

PBSS4032PX,135

Nexperia

PUMH2-Q

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.15 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 1

30

260

AEC-Q101; IEC-60134

PDTC144EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PBHV9040ZF

Nexperia

PNP

SINGLE

YES

55 MHz

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

SILICON

400 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101

BC807-40W/MIF

Nexperia

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

BC858W-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

3 pF

SILICON

30 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PUMH11/ZLF

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.15 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

IEC-60134

PDTA114YQB-Q

Nexperia

1

30

260

AEC-Q101

BC857BQC

Nexperia

1

30

260

BC847BW/SNF

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G3

1

e3

30

260

PEMD18,315

Nexperia

PEMH1,315

Nexperia

BC857-Q

Nexperia

PNP

Single

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PBSS2515E,135

Nexperia

BC847BPN/ZLF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

45 V

TIN

DUAL

R-PDSO-G6

e3

30

260

BCP53-10H

Nexperia

TIN

1

e3

30

260

BC847CW/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBHV9040Z,135

Nexperia

PNP

SINGLE

YES

55 MHz

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

SILICON

400 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

PBHV8115Z,135

Nexperia

NPN

SINGLE

YES

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

10

SILICON

150 V

DUAL

R-PDSO-G4

COLLECTOR

PDTC114YU,135

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

PBSS4240ZF

Nexperia

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCW66GZ

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PZTA42/ZL

Nexperia

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

150 Cel

SILICON

300 V

DUAL

R-PDSO-G4

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

BC847BPNH

Nexperia

TIN

1

e3

30

260

PBSS4220PANSX

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

120 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

2

6

SMALL OUTLINE

150

SILICON

20 V

TIN

DUAL

S-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC807-40LW

Nexperia

PNP

SINGLE

YES

80 MHz

.2 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395