Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PDTA114YE,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 4.7

PDTA114YQC-Q

Nexperia

1

30

260

BCP54TF

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC858B-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

SILICON

30 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMBT2907A/DG

Nexperia

PBRN113ET,235

Nexperia

BC817-25/DG

Nexperia

TIN

1

e3

30

260

PDTC143XQC-Q

Nexperia

AEC-Q101

BC857AQB

Nexperia

TIN

1

e3

30

260

PDTC123TS,116

Nexperia

BCM846BSX

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

250 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

65 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

PDTA123JE,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 21

AEC-Q101; IEC-60134

PMBTA56/DG/B3VL

Nexperia

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

Tin (Sn)

DUAL

R-PDSO-G3

1

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

BC53-10PASX

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

80 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847CW/SNF

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G3

1

e3

30

260

BC817-25QC

Nexperia

TIN

1

e3

30

260

PDTC114EU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBSS4041PX,120

Nexperia

BCM856BS/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC806-25WF

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC856BW/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCW66HZ

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BCX55-10TF

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BC847BVN,215

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

.2 W

200

SILICON

45 V

TIN

DUAL

R-PDSO-F6

1

e3

30

260

BC817-40W/ZLX

Nexperia

TIN

1

e3

30

260

PDTC124EU/DG

Nexperia

BCP52,115

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

60 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

2PD601BSL,235

Nexperia

NPN

SINGLE

YES

250 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

290

SILICON

50 V

DUAL

R-PDSO-G3

TO-236AB

PUMD9/ZLZ

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

PBSS2540E,135

Nexperia

PBHV8115TLHR

Nexperia

NPN

SINGLE

YES

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

150 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BCX55T

Nexperia

NPN

SINGLE

YES

155 MHz

1.1 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

150 Cel

SILICON

60 V

-55 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC857CQC-Q

Nexperia

1

30

260

AEC-Q101

PDTA124XT,235

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 2.1

TO-236AB

BC856BQC-Q

Nexperia

1

30

260

AEC-Q101

BC817-25-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC856W-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

3 pF

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PDTA123JTVL

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 21

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTC143XQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.1

e3

30

260

AEC-Q101; IEC-60134

BCX55TF

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BC807-16QB-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCM856BS/ZLH

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTC115TK,135

Nexperia

PBRN113ES,412

Nexperia

PBSS5160T,235

Nexperia

PNP

SINGLE

YES

220 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

60 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

BC816-25W

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMH1,125

Nexperia

PBSS5255PAPS-Q

Nexperia

1

30

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395