Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC807-16LW

Nexperia

PNP

SINGLE

YES

80 MHz

.2 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101

PBSS4320TVL

Nexperia

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

20 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101

PDTC123JU,135

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

BCP56/ZL

Nexperia

BCP56/ZLF

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

80 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101; IEC-60134

PMBT2222A/AU

Nexperia

150 Cel

PMBT2222A/8

Nexperia

150 Cel

BC847BS-Q

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.4 W

200

150 Cel

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G6

1

30

260

AEC-Q101; IEC-60134

PUMD48-Q

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

30

260

AEC-Q101; IEC-60134

PDTA114EQB-Q

Nexperia

1

30

260

AEC-Q101

BC856AQB

Nexperia

1

30

260

PMBT2907A/AU

Nexperia

BCP53/A

Nexperia

PDTA114EQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PMBT2222A/TE1R

Nexperia

150 Cel

TIN

1

e3

30

260

PDTA124XQB

Nexperia

TIN

1

e3

30

260

BCW32/DG

Nexperia

PDTC143TU/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCX56-16T

Nexperia

NPN

SINGLE

YES

155 MHz

1.1 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

-55 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

PDTC124EQB-Q

Nexperia

1

30

260

AEC-Q101

PBRN113ZS,116

Nexperia

PDTC124EE,135

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

AEC-Q101; IEC-60134

BCP53-16T

Nexperia

PNP

SINGLE

YES

140 MHz

1.8 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCX55-10,146

Nexperia

PBSS304NXZ

Nexperia

NPN

SINGLE

YES

130 MHz

2.1 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.245 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

70 pF

SILICON

60 V

-65 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

BC856BW/ZLX

Nexperia

BCX53-16/B

Nexperia

PDTA144EQC

Nexperia

1

30

260

PDTC114EQC-Q

Nexperia

1

30

260

AEC-Q101

PDTA114ET/DG

Nexperia

PDTA144EQC-Q

Nexperia

1

30

260

BC807-16QB

Nexperia

TIN

1

e3

30

260

PBRN123ES,116

Nexperia

BC846BW/DG

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

65 V

TIN

DUAL

R-PDSO-G3

1

e3

30

260

BCX54TF

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BC816-16WF

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMD20/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PUMD6H

Nexperia

TIN

1

e3

30

260

PBSS303NZ,115

Nexperia

NPN

SINGLE

YES

130 MHz

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

150

SILICON

30 V

65 ns

375 ns

DUAL

R-PDSO-G4

COLLECTOR

IEC-60134

PBRN113ET-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMBT2222A/IN

Nexperia

150 Cel

BCM847BSH-Q

Nexperia

1

30

260

AEC-Q101

BCX56T

Nexperia

NPN

SINGLE

YES

155 MHz

1.1 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

150 Cel

SILICON

80 V

-55 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

PDTC124XQC-Q

Nexperia

1

30

260

AEC-Q101

BCW68FVL

Nexperia

PNP

SINGLE

YES

80 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PBSS302NDH

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

300

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PUMH2/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCM857BS/ZL

Nexperia

TIN

1

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395