Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC817-16QC-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBHV9115TLH,215

Nexperia

PNP

SINGLE

YES

55 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

150 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC856AQB-Q

Nexperia

1

30

260

AEC-Q101

BC846BPN/ZL

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

1.9 pF

SILICON

65 V

-55 Cel

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

IEC-60134

BCM847QAS

Nexperia

TIN

1

30

260

AEC-Q101

BCP55/A

Nexperia

PBHV9040Z/ZLX

Nexperia

PNP

SINGLE

YES

55 MHz

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

SILICON

400 V

DUAL

R-PDSO-G4

COLLECTOR

PDTA143XQC

Nexperia

1

30

260

PDTC115TS,116

Nexperia

BCW68GZ

Nexperia

PNP

SINGLE

YES

80 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BCX52T

Nexperia

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

TIN

SINGLE

R-PSSO-F3

1

e3

30

260

AEC-Q101

BC856B-Q

Nexperia

PNP

Single

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PEMH10/DG

Nexperia

BCX53-10/FD

Nexperia

TIN

1

e3

30

260

PDTC124EQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PMBTA06/DG

Nexperia

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

PDTA124EE,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

AEC-Q101; IEC-60134

2PD601ART-235

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

210

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PDTA124XT/APGR

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 2.1

TO-236AB

NOT SPECIFIED

NOT SPECIFIED

PBSS4360ZX

Nexperia

NPN

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

200

SILICON

60 V

DUAL

R-PDSO-G4

1

COLLECTOR

30

260

AEC-Q101; IEC-60134

PDTA114YU,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

BCM856BSF

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

175 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

65 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

PBSS304NZ,115

Nexperia

NPN

SINGLE

YES

130 MHz

2 W

5.2 A

PLASTIC/EPOXY

SWITCHING

.28 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2 W

80

150 Cel

70 pF

SILICON

60 V

-65 Cel

DUAL

R-PDSO-G4

COLLECTOR

IEC-60134

BCP56-16/A

Nexperia

PDTC114YQB-Q

Nexperia

1

30

260

AEC-Q101

PDTC114EU/MI

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBRN113ZT,235

Nexperia

BC816-16W

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC816-25H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCM847BS/ZL

Nexperia

TIN

1

e3

30

260

PUMD10/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PUMD6/ZL

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR

e3

30

260

PUMD48/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC847RAPN

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC144EU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC847CQC-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC817RA

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC847C-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PBSS4160DS,165

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

220 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

250

SILICON

60 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

BCX52-16T

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC847QAS,147

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

.35 W

200

SILICON

45 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP55-10/A

Nexperia

PDTC114YQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

PBHV9515QAZ

Nexperia

PNP

SINGLE

YES

75 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

150 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PUMD12/ZL

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

BCP56H

Nexperia

TIN

1

e3

30

260

PDTC115EUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

PDTA114EU/MIF

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395