Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PDTA143XTVL

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 2.1

TO-236AB

e3

30

260

PDTA143XQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.1

e3

30

260

AEC-Q101; IEC-60134

BC857CQB

Nexperia

TIN

1

e3

30

260

BCP52-16/A

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

60 V

DUAL

S-PDSO-N3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101; IEC-60134

PDTA143XQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.1

e3

30

260

AEC-Q101; IEC-60134

BC857RA

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCX53-10T

Nexperia

PNP

SINGLE

YES

140 MHz

1.1 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

150 Cel

SILICON

80 V

-55 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC817-16QC

Nexperia

TIN

1

e3

30

260

PDTC124EQC-Q

Nexperia

1

30

260

AEC-Q101

BC846T,135

Nexperia

PUMD13/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC847CQB-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBRN113ZS,112

Nexperia

BC847BS,165

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.35 W

200

SILICON

45 V

DUAL

R-PDSO-G6

BC846AQB-Q

Nexperia

1

30

260

AEC-Q101

PBSS4032NX,135

Nexperia

NPN

SINGLE

YES

145 MHz

2.5 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.34 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

65 pF

SILICON

30 V

-55 Cel

SINGLE

R-PSSO-F3

COLLECTOR

AEC-Q101; IEC-60134

PDTC143TU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC847BQB-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC857AQB-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTA123ETVL

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101

BC817-40-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PUMH11/ZL

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.15 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

Tin (Sn)

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

IEC-60134

BC817-40W/MI

Nexperia

Tin (Sn)

1

e3

30

260

PDTA124XS,116

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

80

SILICON

50 V

BOTTOM

O-PBCY-T3

BUILT-IN BIAS RESISTOR RATIO IS 2.1

TO-92

PDTA124XQB-Q

Nexperia

1

30

260

AEC-Q101

PUMH1,135

Nexperia

PDTC115TS,112

Nexperia

PDTA114YQC

Nexperia

1

30

260

PDTC123JQC

Nexperia

1

30

260

PBSS5240ZF

Nexperia

PNP

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC807-40H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-40W/MI

Nexperia

Tin (Sn)

1

e3

30

260

BC847AQB

Nexperia

TIN

1

e3

30

260

BC846BQB-Q

Nexperia

1

30

260

AEC-Q101

BC807K-16

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCX54-10T

Nexperia

NPN

SINGLE

YES

155 MHz

1.1 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

150 Cel

SILICON

45 V

-55 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

BC849CW/DG

Nexperia

PDTA143EU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC807-40W/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC807DSF

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

40

SILICON

45 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

BC817RAPN

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBRN113ZT-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC857BW/SNF

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

e3

30

260

BC846SH-Q

Nexperia

1

30

260

AEC-Q101

PBSS306NX,135

Nexperia

NPN

SINGLE

YES

110 MHz

4.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

100 V

330 ns

530 ns

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

IEC-60134

PDTC114YU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCX55,135

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

BC856BMB,315

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

220

SILICON

60 V

TIN

BOTTOM

R-PBCC-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395