Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC846BQC

Nexperia

TIN

1

e3

30

260

PBSS8110X,215

Nexperia

PIMN31,165

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G6

BCP51-16/A

Nexperia

BCX55-16T

Nexperia

NPN

SINGLE

YES

155 MHz

1.1 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

150 Cel

SILICON

60 V

-55 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PUMD6H-Q

Nexperia

1

30

260

AEC-Q101

BC806-16R

Nexperia

PNP

SINGLE

YES

80 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC856S/ZL

Nexperia

Tin (Sn)

1

e3

30

260

PDTC144EU/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTA124EQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

2PB709BRL,235

Nexperia

PNP

SINGLE

YES

200 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

210

SILICON

50 V

DUAL

R-PDSO-G3

TO-236AB

PZT2222A/ZLX

Nexperia

NPN

SINGLE

YES

300 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

75

SILICON

40 V

35 ns

250 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

BC816-16

Nexperia

NPN

SINGLE

YES

100 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PBSS302PD,125

Nexperia

PNP

SINGLE

YES

110 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

30

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

PBSS3540E,135

Nexperia

BC807-40QC

Nexperia

TIN

1

e3

30

260

BC856BM,315

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

220

SILICON

60 V

TIN

BOTTOM

R-PBCC-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC55PASX

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

60 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBRN123ES,112

Nexperia

PBSS5330XZ

Nexperia

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

30 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101

BCV47-Q

Nexperia

NPN

DARLINGTON

YES

.25 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

2000

150 Cel

SILICON

-65 Cel

DUAL

R-PDSO-G3

TO-236AB

AEC-Q101; IEC-60134

PBSS302PD,135

Nexperia

PNP

SINGLE

YES

110 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

30

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

PDTA144EU/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTC114EQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PBSS4160DSZ

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

220 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

250

SILICON

60 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PDTC143XQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.1

e3

30

260

AEC-Q101; IEC-60134

PDTC114EE,135

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

AEC-Q101; IEC-60134

PBSS305PX,135

Nexperia

PNP

SINGLE

YES

100 MHz

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

45

SILICON

80 V

100 ns

285 ns

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

BC847BPN/ZL

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

PBHV9115T,115

Nexperia

PNP

SINGLE

YES

115 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

150 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

BC817K-40,215

Nexperia

BC817-40W/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC857CW-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

3 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PDTC114EQB-Q

Nexperia

1

30

260

AEC-Q101

PZTA14/ZL

Nexperia

PUMD6/ZLX

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR

e3

30

260

PBHV9540XX

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMD2,135

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

IEC-60134

BC847CW/MIF

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

DUAL

R-PDSO-G3

PDTC124EU/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC857BW/SN

Nexperia

TIN

1

e3

30

260

PUMD9/ZL

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

BCP55T

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC817-40QC

Nexperia

TIN

1

e3

30

260

BC847AQB-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC856BMBYL

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

220

SILICON

60 V

TIN

BOTTOM

R-PBCC-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBHV9115TLHR

Nexperia

PNP

SINGLE

YES

55 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

150 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTC114TK,135

Nexperia

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395