Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC846BQC-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807W-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PBHV9540XF

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCP55-10T

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC857AQA,147

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

125

SILICON

45 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBRN113ZK,135

Nexperia

PDTC143EQB-Q

Nexperia

1

30

260

AEC-Q101

BC847RAPNZ

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC114YQB

Nexperia

TIN

1

e3

30

260

PDTA114YQB

Nexperia

TIN

1

e3

30

260

PDTC144EQB

Nexperia

TIN

1

e3

30

260

BC857BS-Q

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

2.2 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

BC847AQBZ

Nexperia

TIN

1

e3

30

260

BCM857QAS

Nexperia

TIN

1

30

260

AEC-Q101

BC846BS-Q

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

1.9 pF

SILICON

65 V

-55 Cel

DUAL

R-PDSO-G6

1

30

260

AEC-Q101; IEC-60134

BC847C-QVL

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PZTA92/ZL

Nexperia

PNP

SINGLE

YES

50 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

150 Cel

SILICON

300 V

DUAL

R-PDSO-G4

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

BCP56/A

Nexperia

BC817-25QB

Nexperia

TIN

1

e3

30

260

BC817-16-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC856BW-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

3 pF

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

BC859CW/ZLX

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

SILICON

30 V

DUAL

R-PDSO-G3

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

PDTC143EQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BCW60D/C

Nexperia

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

32 V

150 ns

800 ns

DUAL

R-PDSO-G3

LOW NOISE

TO-236AB

BC847CQC

Nexperia

TIN

1

e3

30

260

PDTA114EU/MI

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCW68FZ

Nexperia

PNP

SINGLE

YES

80 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC846BW/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTA143XT,235

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 2.1

TO-236AB

e3

30

260

BC817-40QAX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTA114EU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC856B/AU

Nexperia

PBSS4160DS,135

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

220 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

250

SILICON

60 V

DUAL

R-PDSO-G6

BC807-25LW

Nexperia

PNP

SINGLE

YES

80 MHz

.2 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101

PDTC123TS,112

Nexperia

BC806-16

Nexperia

PNP

SINGLE

YES

80 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTA143EQC

Nexperia

1

30

260

BC849B/AU

Nexperia

PDTC114EU/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PEMD10/DG

Nexperia

BC857BW/MI

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTC114TS,116

Nexperia

PDTA144EQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC847BPNH-Q

Nexperia

1

30

260

AEC-Q101

PMBT3904RA

Nexperia

TIN

1

e3

30

260

BC846A-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PBSS5255PAPSX

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

2

6

SMALL OUTLINE

50

SILICON

55 V

Tin (Sn)

DUAL

S-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC807-40QAX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395