Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PDTC114EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC807K-25

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-25QC-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCX51,135

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

SILICON

45 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

AEC-Q101; IEC-60134

BCP53-10TF

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BC857CQAZ

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PMBTA56/DG/B3

Nexperia

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

Tin (Sn)

DUAL

R-PDSO-G3

1

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

PBSS4032NZ,135

Nexperia

PDTC143ZQB

Nexperia

TIN

1

e3

30

260

BC856A-Q

Nexperia

PNP

Single

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC846SH

Nexperia

TIN

1

e3

30

260

BC56-10PASX

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

80 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTA143ZQB

Nexperia

TIN

1

e3

30

260

PIMN31,135

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

PBRN123YS,116

Nexperia

PDTC143ZQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

AEC-Q101; IEC-60134

BC847CW/MI

Nexperia

NOT SPECIFIED

NOT SPECIFIED

2PD601BRL,235

Nexperia

NPN

SINGLE

YES

250 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

210

SILICON

50 V

DUAL

R-PDSO-G3

TO-236AB

PUMH13,125

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 10

PDTA143EE,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

.15 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

3 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 1

AEC-Q101; IEC-60134

BC807-40L

Nexperia

PNP

SINGLE

YES

80 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101

PUMD15/ZLX

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

BC846BW/ZLF

Nexperia

TIN

1

e3

30

260

BC846BQB

Nexperia

1

30

260

PDTA144EE,135

Nexperia

PMBT3906/TE1R

Nexperia

PNP

SINGLE

YES

250 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

40 V

70 ns

-65 Cel

300 ns

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

BC847A-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BCW68HVL

Nexperia

PNP

SINGLE

YES

80 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTC124EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC856AW-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

3 pF

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PDTC143XQC

Nexperia

BC846,235

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

65 V

DUAL

R-PDSO-G3

TO-236AB

IEC-60134

BC859B/AU

Nexperia

BC807-40QB

Nexperia

TIN

1

e3

30

260

PUMH9/ZLF

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

BCV49,215

Nexperia

NPN

DARLINGTON

YES

220 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

2000

SILICON

60 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

BCX52TF

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC806-16H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCM856BS/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PUMH17F

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 0.47

e3

30

260

AEC-Q101

BC846S-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

110

150 Cel

1.5 pF

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G6

e3

30

260

AEC-Q101; IEC-60134

PDTA124XU,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 2.1

BC847CW/ZLX

Nexperia

TIN

1

e3

30

260

BCX51-10F

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

SILICON

45 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

PDTC123ETVL

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101

BCX51-16T

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTA143ZQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

AEC-Q101; IEC-60134

BC847BQBZ

Nexperia

TIN

1

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395