Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBSS4160DS,125

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

220 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

250

SILICON

60 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

PUMD13/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBSS4360XF

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-16W/MIX

Nexperia

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

BC847CW-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PBSS5230QAX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBSS4480XZ

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101

BC337-16,412

Nexperia

NPN

SINGLE

NO

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

45 V

BOTTOM

O-PBCY-W3

TO-92

BC847BW/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BCP55TF

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTA114EQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PMP4501QAS

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC856SH

Nexperia

TIN

1

e3

30

260

PDTC143ZQC

Nexperia

1

30

260

PDTA123JQC

Nexperia

1

30

260

PDTA114YQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

BC857BW/SNX

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

e3

30

260

PDTC143EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC817K-25,215

Nexperia

BC857QASZ

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

45 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS5250TH

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMD17/ZL

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO 2.68

BC846BW-Q

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

3 pF

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

BC847AQC-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC817K-16R

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC143ZQC-Q

Nexperia

1

30

260

AEC-Q101

PUMD13/ZLF

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBSS4240ZX

Nexperia

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP52-16,135

Nexperia

PNP

SINGLE

YES

145 MHz

1.35 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

150 Cel

SILICON

60 V

-55 Cel

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PUMH1,165

Nexperia

BCP56-16H

Nexperia

TIN

1

e3

30

260

PDTA143ZU,135

Nexperia

BC807-25W/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC807-Q

Nexperia

PNP

SINGLE

YES

80 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PBHV9040Z/ZL

Nexperia

PNP

SINGLE

YES

55 MHz

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

150 Cel

SILICON

400 V

DUAL

R-PDSO-G4

COLLECTOR

PBSS302ND,165

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

300

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

BC847BW/SN

Nexperia

TIN

1

e3

30

260

BC816-16H

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCX17/B

Nexperia

PNP

SINGLE

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

TO-236AB

PUMH9/ZLZ

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

PBHV9050Z/ZL

Nexperia

PNP

SINGLE

YES

50 MHz

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

70

150 Cel

SILICON

500 V

DUAL

R-PDSO-G4

COLLECTOR

PMBT2222A/DG

Nexperia

150 Cel

PUMH17,125

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTANCE RATIO IS 0.47

PBSS303PZ,115

Nexperia

PNP

SINGLE

YES

130 MHz

5.3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

SILICON

30 V

70 ns

320 ns

DUAL

R-PDSO-G4

COLLECTOR

IEC-60134

BCP51,135

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

45 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBRN123YT-Q

Nexperia

1

30

260

AEC-Q101

BC857BW/MIF

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

PDTC124EU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395