Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBSS5130QAX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTA143ZQC-Q

Nexperia

1

30

260

PIMN31F

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PDTA143ZE,135

Nexperia

BC859CW/ZLF

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

SILICON

30 V

DUAL

R-PDSO-G3

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

BC857CQB-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC114EQB

Nexperia

TIN

1

e3

30

260

PDTA143XU,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 2.1

PBHV8515QA,147

Nexperia

NPN

SINGLE

YES

75 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

35

SILICON

150 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS4350TVL

Nexperia

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

PUMH4/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC807-25W/MIX

Nexperia

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

BC807-40-Q

Nexperia

PNP

SINGLE

YES

80 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMBTA56-Q

Nexperia

PNP

SINGLE

YES

50 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

-65 Cel

DUAL

R-PDSO-G3

1

TO-236AB

30

260

AEC-Q101; IEC-60134

PUMH17,135

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 0.47

e3

30

260

PBSS4032PZ,135

Nexperia

PDTC144ET,235

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

PDTC124EQC

Nexperia

1

30

260

BC846AQB

Nexperia

1

30

260

BC817K-40H

Nexperia

175 Cel

-55 Cel

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BCP51-10,115

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

45 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTC143XQB-Q

Nexperia

1

30

260

AEC-Q101

PDTC143ZQB-Q

Nexperia

1

30

260

AEC-Q101

PDTA114EQC

Nexperia

1

30

260

BC847BS/ZL

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

PDTA114YU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PBSS4130QAX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PUMD18,165

Nexperia

PDTA124XQC-Q

Nexperia

1

30

260

BCP56/ZLX

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

SILICON

80 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101; IEC-60134

PUMD3/DG

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

PBSS302PDH

Nexperia

PNP

SINGLE

YES

110 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

30

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PBSS4160XX

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMH13,135

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

30

260

PDTA114EQC-Q

Nexperia

1

30

260

AEC-Q101

BC817-40QB

Nexperia

TIN

1

e3

30

260

PBSS4021PX,120

Nexperia

BC807-25W/MI

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTC114YQC

Nexperia

1

30

260

PDTC123TS,412

Nexperia

PDTC124ET-Q

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PBSS4160T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBSS5240T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

2PB710ASL-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBSS4140T-Q

Nexperia

NPN

SINGLE

YES

150 MHz

.45 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

10 pF

SILICON

40 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC846BPN-Q

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

1.9 pF

SILICON

65 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

PUMD12-Q

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC807-40QCH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395