Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC817-25QBH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

2PD602ASL-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-16QCH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMH13-Q

Nexperia

TIN

1

e3

30

260

BC817-40QCH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-25QBH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC817-16QBH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC817-40QBH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

2PC4081R-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-16QBH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-25QCH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

2PC4081Q-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC817-25QCH-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

2PD601ART-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC807-40QBH-Q

Nexperia

AEC-Q101

BC817-16QCH-Q

Nexperia

AEC-Q101

PMBTA92-Q

Nexperia

PNP

SINGLE

YES

50 MHz

.25 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

6 pF

SILICON

300 V

-65 Cel

DUAL

R-PDSO-G3

1

TO-236AB

30

260

AEC-Q101; IEC-60134

BC847W-QF

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

1

30

260

AEC-Q101; IEC-60134

PBHV9115T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC143ET-Q

Nexperia

TIN

1

e3

30

260

PDTC124EU-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBHV9040T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC123JU-Q

Nexperia

AEC-Q101

PBHV8540T-Q

Nexperia

AEC-Q101

PDTC114YT-Q

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTOR RATIO IS 4.7

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTC123JT-Q

Nexperia

TIN

1

e3

30

260

PDTC143EU-Q

Nexperia

AEC-Q101

PDTC144ET-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PIMC32-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC114YU-Q

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

PUMD2-Q

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.15 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

2.5 pF

SILICON

50 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PBSS2515YPN-Q

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

420 MHz

.3 W

.5 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

6 pF

SILICON

15 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

PDTC144EU-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PIMC32

Nexperia

TIN

1

e3

30

260

PBHV8115T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PIMN32

Nexperia

PIMN32-Q

Nexperia

AEC-Q101

PMBT2227AYS-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMBTA44-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMBT3904YS-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBSS5350T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBSS5360PAS-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBSS4240T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBSS9110T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCV46-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC143ZU-Q

Nexperia

TIN

1

e3

30

260

PBSS8110T-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PUMD10-QF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 21

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395