Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PDTA123JU,135

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 21

AEC-Q101; IEC-60134

BC816-16R

Nexperia

NPN

SINGLE

YES

100 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PUMD2/ZLH

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

PDTC144EQC-Q

Nexperia

1

30

260

AEC-Q101

PDTA124EQB

Nexperia

TIN

1

e3

30

260

PUMH13,215

Nexperia

BCW66GVL

Nexperia

NPN

SINGLE

YES

100 MHz

.25 W

.8 A

PLASTIC/EPOXY

SWITCHING

.45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTC144EQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PBHV9515QA,147

Nexperia

PNP

SINGLE

YES

75 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

150 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC816-25WF

Nexperia

TIN

1

e3

30

260

AEC-Q101

PBRN113ES,112

Nexperia

PDTC114ET-Q

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BCX54-16,146

Nexperia

NPN

SINGLE

YES

180 MHz

1.35 W

1 A

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PSSO-G3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTC114TS,412

Nexperia

BC817-25QC-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTC143EU/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

BC55-16PASX

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

100

SILICON

60 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBRN123YK,135

Nexperia

PBSS4140DPNF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PDTA114EU/ZLX

Nexperia

TIN

1

e3

30

260

BC847BW/SNX

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G3

1

e3

30

260

PZTA14/ZLF

Nexperia

NPN

DARLINGTON

YES

125 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20000

SILICON

DUAL

R-PDSO-G4

COLLECTOR

PDTC114YQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

PMST2369/ZL

Nexperia

TIN

1

e3

30

260

PBSS4021NZ,135

Nexperia

BCM847BSH

Nexperia

1

30

260

BCX54,146

Nexperia

NPN

SINGLE

YES

180 MHz

1.35 W

1 A

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

-55 Cel

TIN

DUAL

R-PSSO-G3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTA123JQB-Q

Nexperia

1

30

260

AEC-Q101

PDTC114ET/YA

Nexperia

TIN

1

e3

30

260

BCP53-10/A

Nexperia

PDTC115TT,235

Nexperia

PBSS5360X

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC857B/B

Nexperia

BC846BW/ZL

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

65 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

PUMH10-Q

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

PBSS4240TVL

Nexperia

NPN

SINGLE

YES

230 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

SILICON

40 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

BC850C/AU

Nexperia

BC857A-Q

Nexperia

PNP

Single

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC850CW/ZLX

Nexperia

TIN

1

e3

30

260

PDTA143ZQC

Nexperia

1

30

260

BC817-16QB

Nexperia

TIN

1

e3

30

260

PUMH9/ZL

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

30

260

BC807-16-Q

Nexperia

PNP

SINGLE

YES

80 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC806-16W

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMBT3906/TE1

Nexperia

PNP

SINGLE

YES

250 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

40 V

70 ns

300 ns

DUAL

R-PDSO-G3

TO-236AB

PDTA144EU/DG

Nexperia

PDTC123JU/ZL

Nexperia

PDTC143EU/ZLX

Nexperia

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395