Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

934062881115

Nexperia

934069765165

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

934068922115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934069724135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934067157147

Nexperia

TIN

1

e3

30

260

AEC-Q101

934068941115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934068351215

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069071147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934660028135

Nexperia

TIN

1

e3

30

260

AEC-Q101

934069145115

Nexperia

BCP68-25/ZLX

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

160

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934058209146

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101

934068126115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934063583115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934057882135

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 21

e3

30

260

AEC-Q101

934068108115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934058286315

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

60

SILICON

50 V

TIN

BOTTOM

R-PBCC-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 0.47

e3

30

260

934066882115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934061293115

Nexperia

PUMX1,135

Nexperia

PUMB9/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PZT4401/ZL

Nexperia

NPN

SINGLE

YES

250 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

150 Cel

SILICON

40 V

35 ns

250 ns

DUAL

R-PDSO-G4

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

PUMB13/ZL

Nexperia

Tin (Sn)

1

e3

30

260

PUMB16,125

Nexperia

PZT4401/ZLX

Nexperia

NPN

SINGLE

YES

250 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

SILICON

40 V

35 ns

250 ns

DUAL

R-PDSO-G4

COLLECTOR

PUMB16,135

Nexperia

PUMX1,165

Nexperia

PUMB10,135

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 21

e3

30

260

PUMB19,165

Nexperia

PUMB10,125

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 21

PUMB10,165

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 21

PUMB2,135

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

180 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.15 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

3 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PUMB17/ZL

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 0.47

PUMB16,165

Nexperia

PUMX1,125

Nexperia

PUMB19,125

Nexperia

PUMB19,135

Nexperia

PUMB11/ZL

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PUMB9,135

Nexperia

PUMB9,165

Nexperia

BC807-25-Q

Nexperia

PNP

SINGLE

YES

80 MHz

.345 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTA114EQB

Nexperia

TIN

1

e3

30

260

PBSS5360XX

Nexperia

TIN

1

e3

30

260

AEC-Q101

BC857BW/ZLX

Nexperia

TIN

1

e3

30

260

BCP56-10/A

Nexperia

PBRN123YT,235

Nexperia

PBRN123YS,112

Nexperia

BC856BQB

Nexperia

1

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395