Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MPSW51RL1

Onsemi

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

30 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MPSW01RLRE

Onsemi

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

30 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPSW01ARLRPG

Onsemi

NPN

SINGLE

NO

50 MHz

2.5 W

1 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

40 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-226

e1

260

BC489BZL1

Onsemi

NPN

SINGLE

NO

200 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

160

150 Cel

SILICON

80 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

2SB927T

Onsemi

PNP

SINGLE

NO

150 MHz

1 W

2.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

1 W

200

150 Cel

32 pF

SILICON

25 V

BOTTOM

O-PBCY-T3

2N2089RLRA

Onsemi

NPN

SINGLE

NO

50 MHz

1.5 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

450

150 Cel

SILICON

25 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPSW10RL1

Onsemi

NPN

SINGLE

NO

45 MHz

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

150 Cel

SILICON

300 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MPS2369ZL1

Onsemi

NPN

SINGLE

NO

500 MHz

.625 W

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

150 Cel

SILICON

15 V

12 ns

18 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

BC327-25RLRP

Onsemi

PNP

SINGLE

NO

260 MHz

.8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

160

150 Cel

SILICON

45 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2N5310

Onsemi

NPN

SINGLE

NO

100 MHz

.33 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NSV2029M3T5G

Onsemi

PNP

SINGLE

YES

140 MHz

.265 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

1

e3

30

260

AEC-Q101

BC368RL

Onsemi

NPN

SINGLE

NO

65 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

20 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

2N4264ZL1

Onsemi

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

150 Cel

SILICON

15 V

25 ns

35 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MPS-DO4

Onsemi

NPN

DARLINGTON

NO

.3 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

1000

SILICON

25 V

BOTTOM

O-PBCY-W3

TO-92

NSBA124EDP6T5G

Onsemi

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.408 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

60

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

NSVTB60BDW1T1G

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

140 MHz

.385 W

.15 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

120

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 2.13

e3

30

260

AEC-Q101

MPSA05RLRE

Onsemi

NPN

SINGLE

NO

100 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

150 Cel

SILICON

60 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

NSVUMC2NT1G

Onsemi

NPN AND PNP

COMPLEX

YES

.15 W

.1 A

PLASTIC/EPOXY

.25 V

GULL WING

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signal

60

150 Cel

SILICON

50 V

-65 Cel

MATTE TIN

DUAL

R-PDSO-G5

1

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

AEC-Q101

NSBC123EPDXV6T5

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

8

SILICON

50 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e3

260

BC170

Onsemi

NPN

SINGLE

NO

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

36

125 Cel

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

BC489RL

Onsemi

NPN

SINGLE

NO

200 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

80 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

BC250

Onsemi

PNP

SINGLE

NO

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

35

125 Cel

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

MPSW06RLRA

Onsemi

NPN

SINGLE

NO

50 MHz

1 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

150 Cel

SILICON

80 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-226

e0

235

BC546RL1

Onsemi

NPN

SINGLE

NO

300 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

110

150 Cel

SILICON

65 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

CPH3116-TL-E

Onsemi

PNP

SINGLE

YES

420 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

50 V

35 ns

200 ns

TIN BISMUTH

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

2N5551RLRM

Onsemi

NPN

SINGLE

NO

100 MHz

.35 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

30

150 Cel

SILICON

160 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

NSBC143TDXV6T5G

Onsemi

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

160

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

BDC01DRL1

Onsemi

NPN

SINGLE

NO

50 MHz

1 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

100 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

NSBA114YDXV6T1

Onsemi

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

80

SILICON

50 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.21

e3

30

260

RA116C

Onsemi

PNP

YES

.2 W

.1 A

BIP General Purpose Small Signal

80

JAN2N2219AL

Onsemi

NPN

SINGLE

NO

.8 W

.8 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

200 Cel

SILICON

50 V

35 ns

300 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

MIL-19500/251L

EMC2DXV5T1

Onsemi

NPN AND PNP

CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signal

60

SILICON

50 V

TIN

DUAL

R-PDSO-F5

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

260

TN3019A

Onsemi

NPN

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

1 W

15

150 Cel

12 pF

SILICON

80 V

-55 Cel

BOTTOM

O-PBCY-T3

TO-226AE

MCH6544-TL-E

Onsemi

TIN BISMUTH

1

e6

30

260

NSBC124EPDXV6T5

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

60

SILICON

50 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e3

260

NSBC124XPDXV6T1G

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

.25 V

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.14

e3

30

260

MPSW56ZL1

Onsemi

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

80 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

BCH817-16LT1G

Onsemi

NPN

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

175 Cel

SILICON

45 V

-55 Cel

DUAL

R-PDSO-G3

TO-236

NSVT3946DXV6T1G

Onsemi

MATTE TIN

1

e3

30

260

MUN2236T1

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.338 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

SILICON

50 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

30

235

NSS60101DMR6T2G

Onsemi

NPN

SEPARATE, 2 ELEMENTS

YES

200 MHz

.53 W

1 A

PLASTIC/EPOXY

SWITCHING

.2 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.53 W

100

150 Cel

8 pF

SILICON

60 V

-55 Cel

DUAL

R-PDSO-G6

MPS2907A

Onsemi

PNP

SINGLE

NO

200 MHz

.36 W

.6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

60 V

45 ns

100 ns

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

30

235

KSC945YBU-L

Onsemi

NPN

SINGLE

NO

300 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

350

150 Cel

2.5 pF

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

BC213RLRA

Onsemi

PNP

SINGLE

NO

360 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

80

150 Cel

SILICON

30 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BC212RL

Onsemi

PNP

SINGLE

NO

280 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

50 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

2N3398

Onsemi

NPN

SINGLE

NO

.36 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

.36 W

55

150 Cel

10 pF

SILICON

25 V

-65 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

MM421

Onsemi

NPN

SINGLE

NO

15 MHz

1 A

METAL

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

25

SILICON

325 V

BOTTOM

O-MBCY-W3

TO-39

MPSW06ZL1

Onsemi

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

80 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395