ROHM Small Signal Bipolar Junction Transistors (BJT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

UMH3NFHATN

ROHM

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR

e2

AEC-Q101

UMH5NFHATR

ROHM

TIN COPPER

e2

UMT2NTR

ROHM

PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

.15 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G6

1

Not Qualified

e2

10

260

UMX3NTR

ROHM

NPN

SEPARATE, 2 ELEMENTS

YES

180 MHz

.15 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G6

1

Not Qualified

e2

10

260

2SA1727TLQ

ROHM

PNP

SINGLE

YES

12 MHz

10 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

400 V

Tin/Copper (Sn98Cu2)

SINGLE

R-PSSO-G2

1

Not Qualified

e2

10

260

2SAR533PT100

ROHM

PNP

SINGLE

YES

300 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

50 V

TIN COPPER

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e2

10

260

2SC4081T106S

ROHM

NPN

SINGLE

YES

180 MHz

.2 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

3.5 pF

SILICON

50 V

Tin/Silver/Copper (Sn/Ag/Cu)

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SC4617EBHZGTLR

ROHM

2SC5658T2LR

ROHM

NPN

SINGLE

YES

180 MHz

.15 W

.15 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

50 V

Tin/Copper (Sn/Cu)

DUAL

R-PDSO-F3

1

Not Qualified

e2

10

260

DTA123JKAT146

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

Tin/Silver/Copper (Sn/Ag/Cu)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21

e1

10

260

DTC014EUBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

35

SILICON

50 V

TIN

DUAL

R-PDSO-F3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

10

260

DTC114EMT2L

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.15 W

30

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e2

10

260

DTC123EETL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e1

10

260

DTC123YETL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

33

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.5

e1

10

260

DTC124EU3HZGT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

56

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

AEC-Q101

DTC143XUAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e1

10

260

DTC143XUBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.1

e1

10

260

EMD2T2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.03 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signals

56

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e2

10

260

EMD9FHAT2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

68

SILICON

50 V

DUAL

R-PDSO-F6

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

10

260

AEC-Q101

EMD9T2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.07 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

68

150 Cel

SILICON

50 V

DUAL

R-PDSO-F6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

10

260

EMG8T2R

ROHM

NPN

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F5

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 10

e2

10

260

EMZ51T2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

400 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

SILICON

20 V

DUAL

R-PDSO-F6

1

10

260

QSX8TR

ROHM

NPN

SEPARATE, 2 ELEMENTS

YES

320 MHz

.5 W

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

30 V

TIN SILVER COPPER

DUAL

R-PDSO-G6

1

Not Qualified

e1

10

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395