ROHM Small Signal Bipolar Junction Transistors (BJT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SD2118TLQ

ROHM

NPN

SINGLE

YES

150 MHz

10 W

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

20 V

Tin/Copper (Sn98Cu2)

SINGLE

R-PSSO-G3

1

Not Qualified

e2

10

260

2SD2144STPW

ROHM

NPN

SINGLE

NO

350 MHz

.3 W

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

1200

150 Cel

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD2226KT146V

ROHM

NPN

SINGLE

YES

250 MHz

.2 W

.15 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

820

150 Cel

SILICON

50 V

Tin/Silver/Copper (Sn/Ag/Cu)

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SD2318TLU

ROHM

NPN

SINGLE

YES

50 MHz

15 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

560

150 Cel

SILICON

60 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-G2

Not Qualified

e2

10

260

2SD2444KT146R

ROHM

NPN

SINGLE

YES

200 MHz

.2 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

15 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SD2470TP

ROHM

NPN

SINGLE

NO

170 MHz

.4 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

270

150 Cel

SILICON

10 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

e1

2SD2657TL

ROHM

NPN

SINGLE

YES

300 MHz

.5 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

30 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SD2661T100

ROHM

NPN

SINGLE

YES

360 MHz

.5 W

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

12 V

TIN COPPER

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e2

10

260

2SD2670TL

ROHM

NPN

SINGLE

YES

280 MHz

.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

12 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SD2675TL

ROHM

NPN

SINGLE

YES

320 MHz

.5 W

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

30 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

2SD2703TL

ROHM

NPN

SINGLE

YES

320 MHz

.4 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

30 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

e2

10

260

2SD2705STP

ROHM

NPN

SINGLE

NO

35 MHz

.3 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

820

150 Cel

SILICON

20 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

e1

BA12003BF-E2

ROHM

NOT SPECIFIED

NOT SPECIFIED

BC858BWT106

ROHM

PNP

SINGLE

YES

250 MHz

.35 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

210

150 Cel

SILICON

30 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

DTA043ZEBTL

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-F3

1

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

10

260

DTA113ZCAT116

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10

NOT SPECIFIED

NOT SPECIFIED

DTA114TMT2L

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.15 W

100

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e2

10

260

DTA114YCAT116

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.2 W

68

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7

10

260

DTA114YEFRATL

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.15 W

68

SILICON

50 V

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

10

260

AEC-Q101

DTA115EUAT106

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

82

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e1

10

260

DTA123JU3T106

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 21

e3

DTA123JUA-T106

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21

e1

DTA124XMT2L

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

68

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.1

e2

10

260

DTA143EEBTL

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.15 W

30

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e1

10

260

DTA143EMT2L

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.15 W

30

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e2

10

260

DTA143TU3T106

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTOR

e3

DTA143XKAT146

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.1

e1

10

260

DTB113EKT146

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.2 W

.5 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

33

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e1

10

260

DTB113ZCHZGT116

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

56

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

10

260

AEC-Q101

DTB523YMT2L

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

260 MHz

.15 W

.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

140

150 Cel

SILICON

12 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 4.5

e2

10

260

DTC013ZMT2L

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-F3

1

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

DTC014TUBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-F3

1

e3

10

260

DTC014YMT2L

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-F3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

10

260

DTC114EK

ROHM

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

.2 W

30

SILICON

50 V

DTC114ESATP

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

250 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

DTC114GKAT146

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR

e1

10

260

DTC114GUAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e1

10

260

DTC114TCAT116

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.35 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.2 W

100

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR

e1

10

260

DTC114WUAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

24

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.47

e1

10

260

DTC114YEBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.15 W

68

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO 4.7

e1

10

260

DTC114YU3HZGT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTOR RATIO IS 4.7

e3

AEC-Q101

DTC115ECAT116

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.02 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

82

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

10

260

DTC115EUAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

82

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e1

10

260

DTC123EMT2L

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

10

260

DTC123JCAT116

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.36

10

260

DTC123YKAT146

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

33

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.5

e1

10

260

DTC124EEBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

56

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e1

10

260

DTC124ES

ROHM

NPN

NO

.3 W

.1 A

1

BIP General Purpose Small Signal

56

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395