Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
NPN |
SINGLE |
YES |
120 MHz |
.2 W |
.8 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
160 |
150 Cel |
SILICON |
25 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Micro Commercial Components |
PNP |
SINGLE |
YES |
140 MHz |
.15 W |
.6 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
60 V |
45 ns |
100 ns |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
50 MHz |
.625 W |
.5 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
40 |
150 Cel |
SILICON |
300 V |
TIN SILVER COPPER |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
||||||||||||||||||||
Onsemi |
PNP |
DARLINGTON |
NO |
125 MHz |
.625 W |
1.2 A |
PLASTIC/EPOXY |
1.5 V |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
.625 W |
10000 |
150 Cel |
SILICON |
-55 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
30 |
235 |
|||||||||||||||||||
|
Nexperia |
NPN |
SINGLE WITH BUILT-IN RESISTOR |
YES |
225 MHz |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
60 |
SILICON |
50 V |
TIN |
DUAL |
R-PDSO-G3 |
1 |
BUILT IN BIAS RESISTANCE RATIO IS 1 |
TO-236AB |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
.256 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
BIP General Purpose Small Signal |
60 |
150 Cel |
SILICON |
50 V |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
BUILT IN BIAS RESISTANCE RATIO IS 1 |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
130 MHz |
3 W |
6 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
20 |
150 Cel |
SILICON |
60 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
200 MHz |
.35 W |
.6 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
100 |
150 Cel |
SILICON |
40 V |
35 ns |
255 ns |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
|||||||||||||||||||
Vishay Intertechnology |
NPN |
SINGLE |
NO |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
100 |
SILICON |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
100 MHz |
.35 W |
.6 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
20 |
150 Cel |
SILICON |
140 V |
TIN SILVER COPPER |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
.625 W |
.8 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
100 |
150 Cel |
SILICON |
45 V |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
||||||||||||||||||||||
|
NXP Semiconductors |
NPN AND PNP |
YES |
80 MHz |
.37 W |
.5 A |
BIP General Purpose Small Signal |
40 |
150 Cel |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
NPN |
SEPARATE, 2 ELEMENTS |
YES |
250 MHz |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
200 |
SILICON |
45 V |
DUAL |
R-PDSO-G6 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
PNP |
SINGLE |
YES |
1.35 W |
1 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
1.5 W |
63 |
150 Cel |
SILICON |
TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
NPN |
SINGLE WITH BUILT-IN RESISTOR |
YES |
160 MHz |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
70 |
SILICON |
50 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
BUILT-IN BIAS RESISTOR RATIO IS 10 |
e3 |
260 |
||||||||||||||||||||||
|
NXP Semiconductors |
PNP |
SINGLE |
YES |
145 MHz |
1.5 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
63 |
150 Cel |
SILICON |
80 V |
TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
TO-243AA |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||
NXP Semiconductors |
NPN |
SINGLE |
NO |
130 MHz |
1 A |
METAL |
SWITCHING |
1 V |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
5 W |
10 |
200 Cel |
20 pF |
SILICON |
120 V |
500 ns |
900 ns |
BOTTOM |
O-MBCY-W3 |
COLLECTOR |
Not Qualified |
TO-39 |
||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
120 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
150 |
SILICON |
15 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||
Microchip Technology |
NPN |
SEPARATE, 2 ELEMENTS |
YES |
.3 W |
.03 A |
PLASTIC/EPOXY |
NO LEAD |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
Other Transistors |
300 |
200 Cel |
SILICON |
60 V |
TIN LEAD |
DUAL |
R-PDSO-N6 |
Qualified |
e0 |
MIL-19500 |
||||||||||||||||||||||||
|
Leshan Radio |
NPN |
SINGLE |
YES |
100 MHz |
.225 W |
.1 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
200 |
150 Cel |
SILICON |
30 V |
Tin (Sn) |
DUAL |
R-PDSO-G3 |
1 |
e3 |
|||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
250 MHz |
.35 W |
.2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
30 |
150 Cel |
SILICON |
40 V |
70 ns |
-55 Cel |
300 ns |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||
|
Onsemi |
PNP |
SINGLE WITH BUILT-IN RESISTOR |
YES |
.4 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
BIP General Purpose Small Signal |
160 |
150 Cel |
SILICON |
50 V |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
BUILT-IN BIAS RESISTOR |
TO-236AB |
e3 |
40 |
260 |
||||||||||||||||||
|
Onsemi |
PNP |
SINGLE WITH BUILT-IN RESISTOR |
YES |
.31 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
BIP General Purpose Small Signal |
35 |
150 Cel |
SILICON |
50 V |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
e3 |
40 |
260 |
|||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
YES |
.46 W |
.001 A |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
80 |
150 Cel |
SILICON |
12 V |
MATTE TIN |
DUAL |
R-PDSO-F3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
PNP |
SEPARATE, 2 ELEMENTS |
YES |
250 MHz |
.5 W |
.2 A |
PLASTIC/EPOXY |
AMPLIFIER |
FLAT |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
Other Transistors |
30 |
150 Cel |
SILICON |
40 V |
70 ns |
300 ns |
MATTE TIN |
DUAL |
R-PDSO-F6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
YES |
100 MHz |
.48 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
150 |
150 Cel |
SILICON |
100 V |
Tin (Sn) |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
||||||||||||||||||
|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||
|
Nexperia |
NPN AND PNP |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
YES |
230 MHz |
.3 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
.1 V |
GULL WING |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
80 |
150 Cel |
2.5 pF |
SILICON |
50 V |
-65 Cel |
DUAL |
R-PDSO-G6 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE WITH BUILT-IN RESISTOR |
YES |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
80 |
SILICON |
50 V |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G3 |
1 |
BUILT IN BIAS RESISTANCE RATIO IS 1 |
TO-236AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
|||||||||||||||||||||
|
Toshiba |
NPN |
COMPLEX |
YES |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
7 |
16 |
SMALL OUTLINE |
1000 |
SILICON |
50 V |
DUAL |
R-PDSO-G16 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
140 MHz |
1 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
CYLINDRICAL |
Other Transistors |
100 |
200 Cel |
SILICON |
75 V |
MATTE TIN |
BOTTOM |
R-PBCY-W3 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
Microchip Technology |
NPN |
SEPARATE, 2 ELEMENTS |
YES |
.03 A |
PLASTIC/EPOXY |
NO LEAD |
RECTANGULAR |
2 |
6 |
SMALL OUTLINE |
300 |
SILICON |
60 V |
TIN LEAD |
DUAL |
R-PDSO-N6 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||
Texas Instruments |
PNP |
SEPARATE, 2 ELEMENTS |
NO |
100 MHz |
.05 A |
METAL |
AMPLIFIER |
WIRE |
ROUND |
2 |
6 |
CYLINDRICAL |
Other Transistors |
150 |
200 Cel |
SILICON |
60 V |
BOTTOM |
O-MBCY-W6 |
ISOLATED |
Not Qualified |
LOW NOISE |
TO-78 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
100 MHz |
1.5 W |
.6 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
30 |
150 Cel |
SILICON |
160 V |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
40 |
260 |
|||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
100 MHz |
.35 W |
.6 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
30 |
150 Cel |
SILICON |
160 V |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e1 |
40 |
260 |
||||||||||||||||||
|
Toshiba |
NPN |
SINGLE |
NO |
80 MHz |
.4 W |
.15 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
120 |
125 Cel |
SILICON |
50 V |
BOTTOM |
O-PBCY-T3 |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Onsemi |
NPN |
SINGLE |
NO |
220 MHz |
.25 W |
.05 A |
UNSPECIFIED |
AMPLIFIER |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
130 |
125 Cel |
SILICON |
25 V |
Tin/Lead (Sn/Pb) |
BOTTOM |
O-XBCY-W3 |
Not Qualified |
TO-92 |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
200 MHz |
.35 W |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
200 |
150 Cel |
SILICON |
45 V |
TIN SILVER COPPER |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
||||||||||||||||||||
Onsemi |
NPN |
SINGLE |
NO |
200 MHz |
.35 W |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
200 |
150 Cel |
SILICON |
45 V |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
235 |
||||||||||||||||||||
|
Diotec Semiconductor Ag |
NPN |
SINGLE |
NO |
100 MHz |
.8 A |
PLASTIC/EPOXY |
WIRE |
ROUND |
1 |
3 |
CYLINDRICAL |
60 |
150 Cel |
SILICON |
45 V |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Fairchild Semiconductor |
NPN |
SINGLE |
NO |
300 MHz |
.625 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
Other Transistors |
420 |
150 Cel |
SILICON |
30 V |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
|||||||||||||||||||||
|
Panjit International |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
200 MHz |
.3 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
220 |
150 Cel |
SILICON |
65 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Nexperia |
1 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
NPN |
SINGLE WITH BUILT-IN RESISTOR |
YES |
100 MHz |
.33 W |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
BIP General Purpose Small Signal |
60 |
SILICON |
50 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
e3 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
100 MHz |
.8 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
40 |
SILICON |
125 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
ROHM |
NPN |
SINGLE WITH BUILT-IN RESISTOR |
YES |
250 MHz |
.2 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
BIP General Purpose Small Signal |
.2 W |
30 |
SILICON |
50 V |
DUAL |
R-PDSO-G3 |
1 |
BUILT IN BIAS RESISTANCE RATIO IS 1 |
10 |
260 |
AEC-Q101 |
Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.
Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395