Small Signal Bipolar Junction Transistors (BJT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

KSC3265YMTF

Onsemi

NPN

SINGLE

YES

120 MHz

.2 W

.8 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

25 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

MMBT2907AT-TP

Micro Commercial Components

PNP

SINGLE

YES

140 MHz

.15 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

45 ns

100 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

10

260

MPSA42RLRPG

Onsemi

NPN

SINGLE

NO

50 MHz

.625 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

300 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

MPSA63

Onsemi

PNP

DARLINGTON

NO

125 MHz

.625 W

1.2 A

PLASTIC/EPOXY

1.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

.625 W

10000

150 Cel

SILICON

-55 Cel

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

30

235

PDTD143ETR

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMP5201Y-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

SMUN5312DW1T1G

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.256 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

60

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101

ZX5T851GTA

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3 W

6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

e3

30

260

AEC-Q101

2N4403TAR

Onsemi

PNP

SINGLE

NO

200 MHz

.35 W

.6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

40 V

35 ns

255 ns

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2N5172

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N5550G

Onsemi

NPN

SINGLE

NO

100 MHz

.35 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

150 Cel

SILICON

140 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

BC33716TFR

Onsemi

NPN

SINGLE

NO

.625 W

.8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

45 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BC817DPN,125

NXP Semiconductors

NPN AND PNP

YES

80 MHz

.37 W

.5 A

BIP General Purpose Small Signal

40

150 Cel

TIN

1

e3

30

260

BC847SH6433XTMA1

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS

YES

250 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

45 V

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

BCP51-10,135

NXP Semiconductors

PNP

SINGLE

YES

1.35 W

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

1.5 W

63

150 Cel

SILICON

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

BCR116W-E6327

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

160 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

260

BCX53,146

NXP Semiconductors

PNP

SINGLE

YES

145 MHz

1.5 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

63

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

BSW67A

NXP Semiconductors

NPN

SINGLE

NO

130 MHz

1 A

METAL

SWITCHING

1 V

WIRE

ROUND

1

3

CYLINDRICAL

5 W

10

200 Cel

20 pF

SILICON

120 V

500 ns

900 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

FMMT617TA

Diodes Incorporated

NPN

SINGLE

YES

120 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

SILICON

15 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

JANS2N2920U

Microchip Technology

NPN

SEPARATE, 2 ELEMENTS

YES

.3 W

.03 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

300

200 Cel

SILICON

60 V

TIN LEAD

DUAL

R-PDSO-N6

Qualified

e0

MIL-19500

LBC848BLT1G

Leshan Radio

NPN

SINGLE

YES

100 MHz

.225 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

30 V

Tin (Sn)

DUAL

R-PDSO-G3

1

e3

MMBT3906Q-7-F

Diodes Incorporated

PNP

SINGLE

YES

250 MHz

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

-55 Cel

300 ns

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

MMUN2115LT1G

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

160

150 Cel

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

TO-236AB

e3

40

260

MUN5111T1G

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.31 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

35

150 Cel

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

40

260

NSS12100M3T5G

Onsemi

PNP

SINGLE

YES

.46 W

.001 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

NST3906DXV6T1G

Onsemi

PNP

SEPARATE, 2 ELEMENTS

YES

250 MHz

.5 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

300 ns

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

PBSS8110T

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.48 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

100 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PDTC143ZU/ZLX

Nexperia

TIN

1

e3

30

260

PUMD12-QF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

AEC-Q101; IEC-60134

SMMUN2213LT1G

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

ULN2004AFWG

Toshiba

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

1000

SILICON

50 V

DUAL

R-PDSO-G16

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

ZTX1053A

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

CYLINDRICAL

Other Transistors

100

200 Cel

SILICON

75 V

MATTE TIN

BOTTOM

R-PBCY-W3

Not Qualified

e3

30

260

2N2920U

Microchip Technology

NPN

SEPARATE, 2 ELEMENTS

YES

.03 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

300

SILICON

60 V

TIN LEAD

DUAL

R-PDSO-N6

Not Qualified

e0

2N3810

Texas Instruments

PNP

SEPARATE, 2 ELEMENTS

NO

100 MHz

.05 A

METAL

AMPLIFIER

WIRE

ROUND

2

6

CYLINDRICAL

Other Transistors

150

200 Cel

SILICON

60 V

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

LOW NOISE

TO-78

NOT SPECIFIED

NOT SPECIFIED

2N5551G

Onsemi

NPN

SINGLE

NO

100 MHz

1.5 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

30

150 Cel

SILICON

160 V

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

2N5551RL1G

Onsemi

NPN

SINGLE

NO

100 MHz

.35 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

30

150 Cel

SILICON

160 V

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

40

260

2SC1815-Y(TPE2,F)

Toshiba

NPN

SINGLE

NO

80 MHz

.4 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

120

125 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SC828

Onsemi

NPN

SINGLE

NO

220 MHz

.25 W

.05 A

UNSPECIFIED

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

130

125 Cel

SILICON

25 V

Tin/Lead (Sn/Pb)

BOTTOM

O-XBCY-W3

Not Qualified

TO-92

e0

NOT SPECIFIED

NOT SPECIFIED

BC237BG

Onsemi

NPN

SINGLE

NO

200 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

45 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

BC237BZL1

Onsemi

NPN

SINGLE

NO

200 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

45 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

BC337-16BK

Diotec Semiconductor Ag

NPN

SINGLE

NO

100 MHz

.8 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

45 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

BC548CBU

Fairchild Semiconductor

NPN

SINGLE

NO

300 MHz

.625 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

420

150 Cel

SILICON

30 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BC817-40W_R1_00001

Panjit International

TIN

e3

BC856B-13-F

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

65 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

BCP54-10TF

Nexperia

1

30

260

AEC-Q101

BCR512-E6327

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.33 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

60

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

260

BCX41QTA

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.8 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

125 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DTC114EUAFRAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

SILICON

50 V

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

10

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395