Microchip Technology - JANS2N2920U

  1. Home
  2. Microchip Technology - JANS2N2920U
JANS2N2920U by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number JANS2N2920U
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;
Datasheet JANS2N2920U Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .03 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 300
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 6
Qualification: Qualified
Maximum Power Dissipation (Abs): .3 W
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 200 Cel
Reference Standard: MIL-19500
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3904 by Itt Semiconductor

2N3904

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847B by Philips Components

BC847B

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: GULL WING;
2N2905A by National Semiconductor

2N2905A

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
PN2222ABU by Onsemi

PN2222ABU

Onsemi

PN2222ABU by Onsemi is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 40 and fast turn on/off times (ton: 35ns, toff: 285ns).
2N2222A by Silicon Transistor

2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3904 by Nec Electronics America

2N3904

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
BC817-25 by Vishay Semiconductors

BC817-25

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Package Style (Meter): SMALL OUTLINE;
BC547-C by Samsung

BC547-C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
MMBT2222A by Guangdong Kexin Industrial

MMBT2222A

Guangdong Kexin Industrial

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
2N3906 by General Semiconductor

2N3906

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Bytesonic Electronics

2N3904

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Infineon Technologies

MMBT3906

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A;
BC817-40 by NXP Semiconductors

BC817-40

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
ULN2803AFWG(C,ELHA) by Toshiba

ULN2803AFWG(C,ELHA)

Toshiba

Toshiba's ULN2803AFWG(C,ELHA) is an NPN BJT with 8 elements and 18 terminals. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications in small outline packages with Gull Wing terminals.
BC847CDW1T1G by Onsemi

BC847CDW1T1G

Onsemi

BC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, hFE of 420. It operates up to 150°C, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and high transition frequency of 100MHz.
2N2219A by Electronic Transistors

2N2219A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847BE6327HTSA1 by Infineon Technologies

BC847BE6327HTSA1

Infineon Technologies

Infineon BC847BE6327HTSA1 is a NPN BJT transistor with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C. This surface-mount device has Gull Wing terminals in a small outline package.
MMBT3904 by Nte Electronics

MMBT3904

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
BC847C by Weitron Technology

BC847C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2907A by Tt Electronics Plc

2N2907A

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-206AA;