Small Signal Bipolar Junction Transistors (BJT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC846S-QZ

Nexperia

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

110

150 Cel

1.5 pF

SILICON

65 V

-65 Cel

DUAL

R-PDSO-G6

AEC-Q101; IEC-60134

BC847PNQ-7-F

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

300 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signals

200

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

BC857BTT1

Onsemi

PNP

SINGLE

YES

100 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

45 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

235

BC857BV-TP

Micro Commercial Components

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.15 W

.1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

45 V

Matte Tin (Sn)

DUAL

R-PDSO-F6

1

Not Qualified

e3

10

260

BC857BWE6327

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

45 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

BC857W

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

125

150 Cel

5 pF

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BC858ALT1G

Onsemi

PNP

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

125

150 Cel

SILICON

30 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

BCM856DS,115

NXP Semiconductors

PNP

YES

100 MHz

.38 W

.1 A

Other Transistors

200

150 Cel

TIN

1

e3

30

260

BCP69-16/ZLX

Nexperia

PNP

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101; IEC-60134

BCR112T

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

140 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

BCR166E6327HTSA1

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

160 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

BCR183E6433HTMA1

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

BCR198E6327HTSA1

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

190 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCV49,115

NXP Semiconductors

NPN

DARLINGTON

YES

220 MHz

1 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2000

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

TO-243AA

e3

30

260

BCV61C,215

NXP Semiconductors

NPN

CURRENT MIRROR

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

.6 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

FOR TRANSISTOR2 HFE IS 420

e3

30

260

BCX38CSTZ

Diodes Incorporated

NPN

DARLINGTON

NO

.8 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10000

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

BCX70J,235

NXP Semiconductors

NPN

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.55 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

45 V

150 ns

800 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

BCX71KE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BSS64,215

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.225 W

.1 A

PLASTIC/EPOXY

SWITCHING

.2 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

80 V

1000 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

CMPT3906

Central Semiconductor

PNP

SINGLE

YES

250 MHz

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

300 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

DSS20201L-7

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

.6 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

200 ns

610 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

DXT2011P5-13

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3.2 W

6 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

FCX605TA

Diodes Incorporated

NPN

DARLINGTON

YES

150 MHz

2.8 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2000

150 Cel

SILICON

120 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

FJX2222ATF

Onsemi

NPN

SINGLE

YES

300 MHz

.35 W

.6 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FMMT591AQTA

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

FMMT618TA

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

.806 W

2.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

JAN2N1304

Defense Logistics Agency

NPN

SINGLE

NO

.3 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

40

GERMANIUM

BOTTOM

O-MBCY-W3

BASE

Not Qualified

TO-5

MIL-19500/126C

JANS2N3439L

Microchip Technology

NPN

SINGLE

NO

.8 W

1 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

200 Cel

SILICON

350 V

1000 ns

10000 ns

TIN LEAD

BOTTOM

O-MBCY-W3

COLLECTOR

Qualified

e0

MIL-19500/368F

JANSR2N3501UB

Microchip Technology

NPN

SINGLE

YES

.3 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

20

200 Cel

SILICON

150 V

115 ns

1150 ns

GOLD OVER NICKEL

DUAL

R-CDSO-N3

Qualified

HIGH RELIABILITY

e4

MIL-19500; RH - 100K Rad(Si)

JANSR2N3700UBG

STMicroelectronics

Not Qualified

JANTX2N3439UA

Microchip Technology

NPN

SINGLE

YES

5 W

1 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

200 Cel

SILICON

350 V

1000 ns

10000 ns

GOLD OVER NICKEL

DUAL

R-CDSO-N4

COLLECTOR

Qualified

e4

MIL-19500

KST43MTF

Onsemi

NPN

SINGLE

YES

50 MHz

.35 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

200 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

LMBT2222ALT1G

Leshan Radio

NPN

SINGLE

YES

300 MHz

.3 W

.6 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

40 V

35 ns

285 ns

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

LMUN5214DW1T1G

Leshan Radio

NPN

YES

.385 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

LMUN5215DW1T1G

Leshan Radio

NPN

YES

.385 W

.1 A

2

BIP General Purpose Small Signal

160

SILICON

NOT SPECIFIED

NOT SPECIFIED

MMBT2222A-7

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.3 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

e0

MMBT2369ALT3

Onsemi

NPN

SINGLE

YES

.3 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

15 V

12 ns

18 ns

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

MMBT2369ALT3G

Onsemi

NPN

SINGLE

YES

.3 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

15 V

12 ns

18 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMBT2369A_NL

Fairchild Semiconductor

NPN

SINGLE

YES

500 MHz

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

SILICON

15 V

12 ns

18 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH SPEED SATURATED SWITCHING

e3

MMBT2369A_R1_00001

Panjit International

NPN

SINGLE

YES

.2 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

15 V

TIN

DUAL

R-PDSO-G3

e3

MMBT489LT1G

Onsemi

NPN

SINGLE

YES

100 MHz

.71 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMSS8050HE3-H-TP

Micro Commercial Components

1.5 A

200

25 V

NSVBCX17LT1G

Onsemi

PNP

SINGLE

YES

.3 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

45 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

AEC-Q101

NSVMMUN2112LT1G

Onsemi

PNP

YES

.4 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

MATTE TIN

1

e3

30

260

P2N2222ARL1

Onsemi

NPN

SINGLE

NO

300 MHz

.625 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

75

150 Cel

SILICON

40 V

35 ns

285 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

PBSS4230T

NXP Semiconductors

NPN

SINGLE

YES

230 MHz

.48 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

30 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PBSS4480X,135

NXP Semiconductors

NPN

SINGLE

YES

150 MHz

2.5 W

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

TO-243AA

e3

30

260

PBSS5140T-QR

Nexperia

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395