SEPARATE, 2 ELEMENTS Small Signal Field Effect Transistors (FET) 64

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SJ109

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

HN1L03FU

Toshiba

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.05 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

50 ohm

.05 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA607T-T1-A

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

100 ohm

.1 A

DUAL

R-PDSO-G6

e6

UPA603T-A

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

100 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA606T-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

30 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA606T-T1-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

300 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

30 ohm

.1 A

DUAL

R-PDSO-G6

e6

UPA606T

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

30 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA606T(0)-T1-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

300 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

30 ohm

.1 A

DUAL

R-PDSO-G6

e6

UPA607T

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

100 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA602T-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

30 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA607T-A

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

100 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA675T-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

15 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA603T

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

100 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA675T

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

15 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA672T-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

40 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA602T

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

30 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.