SEPARATE, 2 ELEMENTS Small Signal Field Effect Transistors (FET) 64

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FDC6321C

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.9 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.45 ohm

.00068 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

9 pF

ZXMS6005DT8TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2.13 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

.0014 A

DUAL

R-PDSO-G8

1

e3

30

260

FDC6321C_NL

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.9 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.45 ohm

.00068 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

9 pF

LSK389-A-SOIC-8

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

8

SMALL OUTLINE

JUNCTION

135 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G8

1

Not Qualified

e3

SI4532DY-T1

Vishay Siliconix

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.095 ohm

3.9 A

DUAL

R-PDSO-G8

Not Qualified

e0

SI4532DY-T1-E3

Vishay Siliconix

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.095 ohm

3.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

ZXMS6004DT8TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2.13 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

MATTE TIN

.6 ohm

.0009 A

DUAL

R-PDSO-G8

1

e3

30

260

WC191

Solitron Devices

P-CHANNEL

SEPARATE, 2 ELEMENTS

30 V

ENHANCEMENT MODE

2

6

DIE

METAL-OXIDE SEMICONDUCTOR

SILICON

300 ohm

DIE-6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1.5 pF

DMC3060LVT-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

1.16 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

3.6 A

DUAL

R-PDSO-G6

1

e3

260

BSS138DW

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

3.5 ohm

.2 A

DUAL

R-PDSO-G6

e0

8 pF

NPD5566

National Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.325 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

8

IN-LINE

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

TIN LEAD

DUAL

R-PDIP-T8

Not Qualified

e0

LSK389-B-SOIC-8

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

8

SMALL OUTLINE

JUNCTION

135 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G8

1

Not Qualified

e3

HCT802

Tt Electronics Plc

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.5 W

CERAMIC, METAL-SEALED COFIRED

90 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

2 A

DUAL

R-CDSO-N6

Not Qualified

HIGH RELIABILITY

e0

10 pF

HCT802TX

Tt Electronics Plc

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

1.5 W

CERAMIC, METAL-SEALED COFIRED

90 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

2 A

DUAL

R-CDSO-N6

Not Qualified

HIGH RELIABILITY

e0

10 pF

HCT802TXV

Tt Electronics Plc

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

1.5 W

CERAMIC, METAL-SEALED COFIRED

90 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

2 A

DUAL

R-CDSO-N6

Not Qualified

HIGH RELIABILITY

e0

10 pF

LSK489SOT-236LROHS

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.5 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

.5 W

150 Cel

SILICON

-55 Cel

DUAL

R-PDSO-G6

3 pF

LSK489TO-716LROHS

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.5 W

UNSPECIFIED

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

.5 W

150 Cel

SILICON

-55 Cel

BOTTOM

O-XBCY-W6

TO-71

3 pF

SQ3585EV-T1-GE3

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

Matte Tin (Sn)

.12 ohm

3.57 A

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

NPD5564

National Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.325 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

8

IN-LINE

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

TIN LEAD

DUAL

R-PDIP-T8

Not Qualified

e0

NPD5565

National Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.325 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

8

IN-LINE

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

TIN LEAD

DUAL

R-PDIP-T8

Not Qualified

e0

2SJ109-BL

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

3N207

Texas Instruments

P-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

2

.1 A

8

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

400 ohm

.1 A

BOTTOM

O-MBCY-W8

ISOLATED

Not Qualified

TO-76

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

2N5045

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

TIS25

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

SWITCHING

50 V

WIRE

ROUND

DEPLETION MODE

2

7

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

500 ohm

BOTTOM

O-MBCY-W7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5547

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5046

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

TIS70

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

4 pF

TIS27

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

SWITCHING

50 V

WIRE

ROUND

DEPLETION MODE

2

7

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

500 ohm

BOTTOM

O-MBCY-W7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5545

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5047

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5546

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

TIS26

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

SWITCHING

50 V

WIRE

ROUND

DEPLETION MODE

2

7

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

500 ohm

BOTTOM

O-MBCY-W7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4 pF

TIS69

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

4 pF

MCH6613-TL-E

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Bismuth (Sn/Bi)

3.7 ohm

.35 A

DUAL

R-PDSO-F6

1

e6

FC13

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

SILICON

.01 A

DUAL

R-PDSO-G6

Not Qualified

934063113115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G6

LOW NOISE

2.5 pF

934057915115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G6

LOW NOISE

2.5 pF

PMBFJ620,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.19 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

FET General Purpose Small Signal

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e3

30

260

2.5 pF

PMBFJ620

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.19 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e3

30

260

2.5 pF

ZDM4306NTC

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.33 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

30 pF

UZDM4206N

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

1 ohm

1 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

20 pF

ZDM4206N

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2.75 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

1 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

20 pF

UZDM4306NTA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.33 ohm

2 A

DUAL

R-PDSO-G10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

30 pF

DMC3060LVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

1.16 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

3.6 A

DUAL

R-PDSO-G6

1

e3

260

UZDM4306N

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

.33 ohm

2 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

30 pF

ZDM4206NTC

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1 ohm

1 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

20 pF

2SJ109-GR

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

2SJ109-V

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.