SQ3585EV-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQ3585EV-T1-GE3
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
Datasheet	SQ3585EV-T1-GE3 Datasheet
In Stock	6,529

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3.57 A
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.12 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
6,529	-	-

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