Vishay Intertechnology - SQ3585EV-T1-GE3

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SQ3585EV-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ3585EV-T1-GE3
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
Datasheet SQ3585EV-T1-GE3 Datasheet
In Stock6,529
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3.57 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .12 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: SQ3585EV-T1_GE3-ND
SQ3585EV-T1_GE3TR
SQ3585EV-T1_GE3DKR
SQ3585EV-T1_GE3CT
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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