NXP Semiconductors - PMBFJ620,115

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PMBFJ620,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMBFJ620,115
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Minimum DS Breakdown Voltage: 25 V;
Datasheet PMBFJ620,115 Datasheet
In Stock3,428
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Small Signal
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .19 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Feedback Capacitance (Crss): 2.5 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Additional Features: LOW NOISE
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
3,428 $0.290 $994.120

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