Formosa Microsemi - 2N7002W

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2N7002W by Formosa Microsemi

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Manufacturer Formosa Microsemi
Manufacturer's Part Number 2N7002W
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Additional Features: ULTRA LOW RESISTANCE; Transistor Application: SWITCHING;
Datasheet 2N7002W Datasheet
In Stock15,894
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .115 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .2 W
Maximum Drain-Source On Resistance: 7.5 ohm
Maximum Feedback Capacitance (Crss): 5 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Additional Features: ULTRA LOW RESISTANCE
Peak Reflow Temperature (C): 260
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