Diodes Incorporated - MMBF170Q-13-F

  1. Home
  2. Diodes Incorporated - MMBF170Q-13-F
MMBF170Q-13-F by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number MMBF170Q-13-F
Description Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
Datasheet MMBF170Q-13-F Datasheet
NAME DESCRIPTION
Peak Reflow Temperature (C): 260
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NTR2101PT1G by Onsemi

NTR2101PT1G

Onsemi

NTR2101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 8V DS Breakdown Voltage, 3.7A Drain Current, and 0.052ohm On Resistance. With ENHANCEMENT MODE operation, it's ideal for small outline packages in high-temp environments up to 150°C.
2N7002W by Fairchild Semiconductor

2N7002W

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Feedback Capacitance (Crss): 7 pF; Terminal Finish: MATTE TIN;
BSS138-G by Comchip Technology

BSS138-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
2N7002K-TP by Micro Commercial Components

2N7002K-TP

Micro Commercial Components

2N7002K-TP by Micro Commercial Components is a N-channel FET with 60V DS breakdown voltage. Ideal for switching applications, it features single configuration with built-in diode and operates in enhancement mode. With 3 terminals, matte tin finish, and max drain current of 0.34A, this MOSFET has a peak reflow temperature of 260°C.
MMBF170LT3 by Onsemi

MMBF170LT3

Onsemi

MMBF170LT3 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 0.225W power dissipation, it offers reliable performance in small outline packages.
BSS123W by Changzhou Galaxy Century Microelectronics

BSS123W

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Power Dissipation Ambient: .2 W; Package Body Material: PLASTIC/EPOXY;
BS170 by Fairchild Semiconductor

BS170

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Transistor Application: SWITCHING; Package Style (Meter): CYLINDRICAL;
BSS123 by Onsemi

BSS123

Onsemi

BSS123 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 0.36W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
SI2319DS-T1-E3 by Vishay Intertechnology

SI2319DS-T1-E3

Vishay Intertechnology

SI2319DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.082 ohm On Resistance. Suitable for surface mount, it has a max operating temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
BSN20BKR by Nexperia

BSN20BKR

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 3.2 ohm;
IRLML5103TRPBF by International Rectifier

IRLML5103TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3;
IRLL2705TRPBF by Infineon Technologies

IRLL2705TRPBF

Infineon Technologies

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 30 A; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
BSS138PW,115 by Nexperia

BSS138PW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Minimum DS Breakdown Voltage: 60 V; Operating Mode: ENHANCEMENT MODE;
2N7002P,215 by NXP Semiconductors

2N7002P,215

NXP Semiconductors

2N7002P,215 by NXP Semiconductors is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.36A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm On Resistance. Package style is SMALL OUTLINE, suitable for surface mount technology.
NDS0605 by Onsemi

NDS0605

Onsemi

NDS0605 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.36W. The small outline package with gull wing terminals makes it suitable for surface mount designs.
BS170 by Teledyne Components

BS170

Teledyne Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: WIRE; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 5 pF;
2N7002CK,215 by Nexperia

2N7002CK,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.6 ohm; Maximum Feedback Capacitance (Crss): 7.5 pF; Minimum DS Breakdown Voltage: 60 V;
2N7002 by Unisonic Technologies

2N7002

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
BVSS138LT1G by Onsemi

BVSS138LT1G

Onsemi

BVSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates b/w -55 to 150 °C and complies with AEC-Q101 standard.
2N7000-G by Comchip Technology

2N7000-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;