Image shown is a representation only.
| Manufacturer | Micro Commercial Components |
|---|---|
| Manufacturer's Part Number | 2N7000 |
| Description | Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; |
| Datasheet | 2N7000 Datasheet |
| In Stock | 46,113 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .2 A |
| JEDEC-95 Code: | TO-92 |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









