Vishay Siliconix - IRLL110TRPBF

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IRLL110TRPBF by Vishay Siliconix

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Manufacturer Vishay Siliconix
Manufacturer's Part Number IRLL110TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Additional Features: AVALANCHE RATED; Transistor Element Material: SILICON;
Datasheet IRLL110TRPBF Datasheet
In Stock41,949
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.5 A
Maximum Pulsed Drain Current (IDM): 12 A
Surface Mount: YES
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .54 ohm
Avalanche Energy Rating (EAS): 50 mJ
JEDEC-95 Code: TO-261AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): 260
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