Vishay Intertechnology - SQ2361AEES-T1-GE3

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SQ2361AEES-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ2361AEES-T1-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Feedback Capacitance (Crss): 45 pF;
Datasheet SQ2361AEES-T1-GE3 Datasheet
In Stock27,390
NAME DESCRIPTION
Other Names: SQ2361AEES-T1_GE3DKR
SQ2361AEES-T1-GE3
SQ2361AEES-T1_GE3-ND
SQ2361AEES-T1_GE3TR
SQ2361AEES-T1_GE3CT
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 45 pF
Maximum Drain Current (ID): 2.8 A
JEDEC-95 Code: TO-236
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .17 ohm
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