Infineon Technologies - BSD316SNH6327XTSA1

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BSD316SNH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSD316SNH6327XTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Feedback Capacitance (Crss): 7 pF; Terminal Finish: TIN;
Datasheet BSD316SNH6327XTSA1 Datasheet
In Stock33,685
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.4 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .5 W
Maximum Drain-Source On Resistance: .0016 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: BSD316SNH6327XTSA1-ND
BSD316SN H6327
448-BSD316SNH6327XTSA1DKR
BSD316SN H6327-ND
448-BSD316SNH6327XTSA1CT
448-BSD316SNH6327XTSA1TR
SP000917668
Maximum Feedback Capacitance (Crss): 7 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
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