Diodes Incorporated - BSS138W

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BSS138W by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number BSS138W
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Power Dissipation Ambient: .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BSS138W Datasheet
In Stock115,789
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .2 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .2 W
Maximum Drain-Source On Resistance: 3.5 ohm
Maximum Feedback Capacitance (Crss): 8 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 50 V
Reference Standard: UL RECOGNIZED
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