Leshan Radio - LBSS84LT1G

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LBSS84LT1G by Leshan Radio

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Manufacturer Leshan Radio
Manufacturer's Part Number LBSS84LT1G
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
Datasheet LBSS84LT1G Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .13 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 50 V
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .13 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 10 ohm
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