Onsemi - NTJD1155LT1G

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NTJD1155LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTJD1155LT1G
Description N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet NTJD1155LT1G Datasheet
In Stock42,763
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.3 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .175 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 8 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1.3 A
Peak Reflow Temperature (C): 260
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