COMPLEX Small Signal Field Effect Transistors (FET) 46

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FDMQ8205A

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD SILVER

.051 ohm

1.7 A

DUAL

R-PDSO-N12

1

e4

30

260

NTJD1155LT1G

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.4 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.175 ohm

1.3 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTGD1100LT1G

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.83 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.14 ohm

3.3 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDMQ8205

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD SILVER

.051 ohm

1.7 A

DUAL

R-PDSO-N12

1

e4

30

260

NMLU1210TWG

Onsemi

N-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.032 ohm

1.16 A

DUAL

S-XDSO-N6

1

DRAIN

e3

30

260

NTJD1155LT2G

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.4 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.175 ohm

1.3 A

DUAL

R-PDSO-G6

1

e3

30

260

NTJD1155LT1

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.4 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.175 ohm

1.3 A

DUAL

R-PDSO-G6

Not Qualified

e0

235

SI1865DL-T1-GE3

Vishay Intertechnology

P-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE MATTE TIN

.215 ohm

DUAL

R-PDSO-G6

1

Not Qualified

ESD PROTECTION

BF1205C,115

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

.18 W

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

TPIC1502DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

.005 A

DUAL

R-PDSO-G24

Not Qualified

TPIC1504DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

.005 A

DUAL

R-PDSO-G24

Not Qualified

TPIC1504DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

2 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

.005 A

DUAL

R-PDSO-G24

Not Qualified

TPIC1502DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

.3 ohm

.005 A

DUAL

R-PDSO-G24

Not Qualified

TPIC1505DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.48 ohm

1 A

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

TPIC1533DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

1.5 A

DUAL

R-PDSO-G24

Not Qualified

JFE2140DR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

8

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.05 A

DUAL

R-PDSO-G8

2

MS-012AA

e4

260

TPIC1505DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.48 ohm

1 A

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

TPIC1533DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

1.5 A

DUAL

R-PDSO-G24

Not Qualified

NIMD6302R2G

Onsemi

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

6.5 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

ESD PROTECTED

200 pF

NIMD6302R2

Onsemi

N-CHANNEL

COMPLEX

YES

1.67 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

6.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.05 ohm

6.5 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

ESD PROTECTED

e0

235

200 pF

STGD1100LT1G

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.83 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.14 ohm

3.3 A

DUAL

R-PDSO-G6

1

e3

30

260

NTGD1100LT1

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.83 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.14 ohm

3.3 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

235

PHN70308

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

7

28

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

5 A

DUAL

R-PDSO-G28

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-150AH

PHN405118

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

16

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

3.7 A

DUAL

R-PDSO-G16

Not Qualified

MO-150AC

PHN70308/T3

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

7

28

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

5 A

DUAL

R-PDSO-G28

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-150AH

PHN708118

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

7

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.08 ohm

3.1 A

DUAL

R-PDSO-G24

Not Qualified

MO-150AG

PHN708

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

7

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.08 ohm

3.1 A

DUAL

R-PDSO-G24

Not Qualified

MO-150AG

PHN405

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

16

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

3.7 A

DUAL

R-PDSO-G16

Not Qualified

MO-150AC

PHN603S115

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 ohm

5 A

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

135 pF

934055563118

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

7

28

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

5 A

DUAL

R-PDSO-G28

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-150AH

BF1205

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

.2 W

PLASTIC/EPOXY

SWITCHING

10 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

BF1205C

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

.18 W

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

DMC25D0UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

3.2 A

DUAL

R-PDSO-G6

HIGH RELIABILITY

e3

260

47 pF

DMN1250UFEL-7

Diodes Incorporated

N-CHANNEL

COMPLEX

YES

1.25 W

PLASTIC/EPOXY

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

8

12

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.45 ohm

2 A

QUAD

S-PQCC-N12

SOURCE

e3

260

13 pF

DMC25D0UVT-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

3.2 A

DUAL

R-PDSO-G6

HIGH RELIABILITY

e3

260

47 pF

SSM5P16FU

Toshiba

P-CHANNEL

COMPLEX

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

12 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

TBD62003AFG,EL

Toshiba

N-CHANNEL

COMPLEX

YES

.625 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

7

16

SMALL OUTLINE

JUNCTION

85 Cel

SILICON

-40 Cel

.5 A

DUAL

R-PDSO-G16

TPCT4203

Toshiba

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-PDSO-F4

Not Qualified

UPA1603CX

Renesas Electronics

N-CHANNEL

COMPLEX

NO

1 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.87 A

16

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

85 Cel

SILICON

TIN LEAD

1.3 ohm

.87 A

DUAL

R-PDIP-T16

Not Qualified

e0

UPA1981TE-T1

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

2.8 A

DUAL

R-PDSO-G6

1

Not Qualified

UPA509TA

Renesas Electronics

N-CHANNEL

COMPLEX

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

.05 A

DUAL

R-PDSO-G5

1

Not Qualified

UPA1981TE-T1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.07 ohm

2.8 A

DUAL

R-PDSO-G6

Not Qualified

e6

UPA1981TE-T2

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

2.8 A

DUAL

R-PDSO-G6

1

Not Qualified

UPA1603CX-A

Renesas Electronics

N-CHANNEL

COMPLEX

NO

1 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.87 A

16

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

85 Cel

SILICON

TIN BISMUTH

1.3 ohm

.87 A

DUAL

R-PDIP-T16

Not Qualified

e6

10

260

UPA1981TE-T2-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

2.8 A

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA1981TE

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

2.8 A

DUAL

R-PDSO-G6

1

Not Qualified

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.