Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
12 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD SILVER |
.051 ohm |
1.7 A |
DUAL |
R-PDSO-N12 |
1 |
e4 |
30 |
260 |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1.3 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.175 ohm |
1.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
.83 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
3.3 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.14 ohm |
3.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
12 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD SILVER |
.051 ohm |
1.7 A |
DUAL |
R-PDSO-N12 |
1 |
e4 |
30 |
260 |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
UNSPECIFIED |
SWITCHING |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.032 ohm |
1.16 A |
DUAL |
S-XDSO-N6 |
1 |
DRAIN |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.175 ohm |
1.3 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1.3 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.175 ohm |
1.3 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e0 |
235 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
PURE MATTE TIN |
.215 ohm |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
ESD PROTECTION |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
.18 W |
PLASTIC/EPOXY |
SWITCHING |
6 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.03 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.03 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e3 |
||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
1.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.3 ohm |
.005 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
1.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.3 ohm |
.005 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
2.86 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
2 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.3 ohm |
.005 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
|||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
2.86 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
1.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
.3 ohm |
.005 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
|||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
2.86 W |
PLASTIC/EPOXY |
AMPLIFIER |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
1.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.48 ohm |
1 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
MS-013AD |
|||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
2.86 W |
PLASTIC/EPOXY |
AMPLIFIER |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
3 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.3 ohm |
1.5 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
|||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
40 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
2 |
8 |
SMALL OUTLINE |
JUNCTION |
125 Cel |
SILICON |
-40 Cel |
NICKEL PALLADIUM GOLD |
.05 A |
DUAL |
R-PDSO-G8 |
2 |
MS-012AA |
e4 |
260 |
||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
1.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.48 ohm |
1 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
MS-013AD |
||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
3 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.3 ohm |
1.5 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.05 ohm |
6.5 A |
DUAL |
R-PDSO-G8 |
1 |
ISOLATED |
Not Qualified |
ESD PROTECTED |
200 pF |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
1.67 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
6.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.05 ohm |
6.5 A |
DUAL |
R-PDSO-G8 |
ISOLATED |
Not Qualified |
ESD PROTECTED |
e0 |
235 |
200 pF |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
.83 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.14 ohm |
3.3 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
.83 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
3.3 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.14 ohm |
3.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
7 |
28 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.08 ohm |
5 A |
DUAL |
R-PDSO-G28 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MO-150AH |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
16 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.06 ohm |
3.7 A |
DUAL |
R-PDSO-G16 |
Not Qualified |
MO-150AC |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
7 |
28 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.08 ohm |
5 A |
DUAL |
R-PDSO-G28 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MO-150AH |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
7 |
24 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.08 ohm |
3.1 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
MO-150AG |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
7 |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.08 ohm |
3.1 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
MO-150AG |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
16 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.06 ohm |
3.7 A |
DUAL |
R-PDSO-G16 |
Not Qualified |
MO-150AC |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
24 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.03 ohm |
5 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
MS-013AD |
135 pF |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
7 |
28 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.08 ohm |
5 A |
DUAL |
R-PDSO-G28 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MO-150AH |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
10 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.03 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.03 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e3 |
||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
COMPLEX |
YES |
.18 W |
PLASTIC/EPOXY |
SWITCHING |
6 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.03 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.03 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e3 |
||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
HIGH RELIABILITY |
e3 |
260 |
47 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
COMPLEX |
YES |
1.25 W |
PLASTIC/EPOXY |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
8 |
12 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.45 ohm |
2 A |
QUAD |
S-PQCC-N12 |
SOURCE |
e3 |
260 |
13 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
HIGH RELIABILITY |
e3 |
260 |
47 pF |
||||||||||||||||||||||
Toshiba |
P-CHANNEL |
COMPLEX |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.1 A |
5 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
12 ohm |
.1 A |
DUAL |
R-PDSO-G5 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
YES |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
7 |
16 |
SMALL OUTLINE |
JUNCTION |
85 Cel |
SILICON |
-40 Cel |
.5 A |
DUAL |
R-PDSO-G16 |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
DUAL |
R-PDSO-F4 |
Not Qualified |
|||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
.87 A |
16 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
85 Cel |
SILICON |
TIN LEAD |
1.3 ohm |
.87 A |
DUAL |
R-PDIP-T16 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.8 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
2.8 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
YES |
.2 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
5 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
.05 A |
DUAL |
R-PDSO-G5 |
1 |
Not Qualified |
||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.8 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.07 ohm |
2.8 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e6 |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.8 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
2.8 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
.87 A |
16 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
85 Cel |
SILICON |
TIN BISMUTH |
1.3 ohm |
.87 A |
DUAL |
R-PDIP-T16 |
Not Qualified |
e6 |
10 |
260 |
|||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.8 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
2.8 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.8 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
2.8 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.