NXP Semiconductors - BF1205C,115

BF1205C,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1205C,115
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G6; Package Shape: RECTANGULAR;
Datasheet BF1205C,115 Datasheet
In Stock40
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .03 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 6 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .18 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .03 A
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