Onsemi - NIMD6302R2G

NIMD6302R2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NIMD6302R2G
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Case Connection: ISOLATED; Package Body Material: PLASTIC/EPOXY;
Datasheet NIMD6302R2G Datasheet
In Stock1,123
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 200 pF
Maximum Drain Current (ID): 6.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ESD PROTECTED
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .05 ohm
Moisture Sensitivity Level (MSL): 1
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