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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NIMD6302R2 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; Case Connection: ISOLATED; Minimum DS Breakdown Voltage: 30 V; |
| Datasheet | NIMD6302R2 Datasheet |
| In Stock | 1,451 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 6.5 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 1.67 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .05 ohm |
| Maximum Feedback Capacitance (Crss): | 200 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | ESD PROTECTED |
| Maximum Drain Current (Abs) (ID): | 6.5 A |
| Peak Reflow Temperature (C): | 235 |
