Renesas Electronics - UPA1981TE-T1

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UPA1981TE-T1 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA1981TE-T1
Description N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .07 ohm; Maximum Drain Current (ID): 2.8 A;
Datasheet UPA1981TE-T1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.8 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 2.8 A
Maximum Drain-Source On Resistance: .07 ohm
Moisture Sensitivity Level (MSL): 1
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