Vishay Siliconix - SI4459ADY-T1-GE3

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SI4459ADY-T1-GE3 by Vishay Siliconix

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Manufacturer Vishay Siliconix
Manufacturer's Part Number SI4459ADY-T1-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .005 ohm;
Datasheet SI4459ADY-T1-GE3 Datasheet
In Stock18,368
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 19.7 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .005 ohm
Moisture Sensitivity Level (MSL): 1
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