Toshiba - TBD62003AFG,EL

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TBD62003AFG,EL by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TBD62003AFG,EL
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Maximum Drain Current (ID): .5 A; Terminal Position: DUAL;
Datasheet TBD62003AFG,EL Datasheet
NAME DESCRIPTION
Other Names: TBD62003AFG(Z,EL)
TBD62003AFGELTR
TBD62003AFGELCT
TBD62003AFGELDKR
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
Maximum Drain Current (ID): .5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 16
Minimum DS Breakdown Voltage: 50 V
Maximum Power Dissipation (Abs): .625 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G16
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 85 Cel
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