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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | UPA1981TE-T1-A |
Description | N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e6; |
Datasheet | UPA1981TE-T1-A Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2.8 A |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN BISMUTH |
JESD-609 Code: | e6 |
No. of Terminals: | 6 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 1 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 2.8 A |
Maximum Drain-Source On Resistance: | .07 ohm |