Onsemi - NUD3124DMT1G

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NUD3124DMT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NUD3124DMT1G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
Datasheet NUD3124DMT1G Datasheet
In Stock41,579
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .15 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.4 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: ONSFSCNUD3124DMT1G
NUD3124DMT1GOSTR
2156-NUD3124DMT1G-OS
NUD3124DMT1GOSDKR
NUD3124DMT1GOS
NUD3124DMT1GOSCT
NUD3124DMT1GOS-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 28 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): 260
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