Vishay Siliconix - SI4909DY-T1-GE3

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SI4909DY-T1-GE3 by Vishay Siliconix

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Manufacturer Vishay Siliconix
Manufacturer's Part Number SI4909DY-T1-GE3
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8 A; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .027 ohm;
Datasheet SI4909DY-T1-GE3 Datasheet
In Stock7,140
NAME DESCRIPTION
Other Names: SI4909DY-T1-GE3TR
SI4909DY-T1-GE3CT
SI4909DY-T1-GE3DKR
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .027 ohm
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