NXP Semiconductors - NX7002AK,215

NX7002AK,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number NX7002AK,215
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.33 W; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN;
Datasheet NX7002AK,215 Datasheet
In Stock900,317
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .19 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.33 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 5.2 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: IEC-60134
Maximum Drain Current (Abs) (ID): .19 A
Peak Reflow Temperature (C): 260
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