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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BSS316NH6327XTSA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Terminal Form: GULL WING; Maximum Drain Current (ID): 1.4 A; |
Datasheet | BSS316NH6327XTSA1 Datasheet |
In Stock | 376,019 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Feedback Capacitance (Crss): | 7 pF |
Maximum Drain Current (ID): | 1.4 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Maximum Drain-Source On Resistance: | .16 ohm |
Moisture Sensitivity Level (MSL): | 1 |