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Manufacturer | Diodes Incorporated |
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Manufacturer's Part Number | DMN1250UFEL-7 |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; |
Datasheet | DMN1250UFEL-7 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 2 A |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 12 |
Maximum Power Dissipation (Abs): | 1.25 W |
Terminal Position: | QUAD |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | S-PQCC-N12 |
No. of Elements: | 8 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | SOURCE |
Maximum Drain-Source On Resistance: | .45 ohm |
Maximum Feedback Capacitance (Crss): | 13 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 12 V |
Peak Reflow Temperature (C): | 260 |