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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN1250UFEL-7 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; |
| Datasheet | DMN1250UFEL-7 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 2 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 12 |
| Maximum Power Dissipation (Abs): | 1.25 W |
| Terminal Position: | QUAD |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | S-PQCC-N12 |
| No. of Elements: | 8 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Drain-Source On Resistance: | .45 ohm |
| Maximum Feedback Capacitance (Crss): | 13 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 12 V |
| Peak Reflow Temperature (C): | 260 |









