Onsemi - FDMQ8205

  1. Home
  2. Onsemi - FDMQ8205
FDMQ8205 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FDMQ8205
Description N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-N12;
Datasheet FDMQ8205 Datasheet
In Stock1,959
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.7 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD SILVER
JESD-609 Code: e4
No. of Terminals: 12
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N12
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .051 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,959 - -

Popular Products

Category Top Products

2N7002 by Formosa Microsemi

2N7002

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
FDC6312P by Onsemi

FDC6312P

Onsemi

FDC6312P by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 2.3A Drain Current, and 0.115 ohm On Resistance. With a max operating temperature of 150°C, this MOSFET is ideal for small outline packages in various electronic devices.
BS170/D27Z by National Semiconductor

BS170/D27Z

National Semiconductor

BS170/D27Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A ID, and 5 ohm RDS. It is used in enhancement mode applications due to its SILICON transistor element material and METAL-OXIDE SEMICONDUCTOR technology.
BSS123 by Siemens

BSS123

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
BS170 by Vishay Semiconductors

BS170

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE; No. of Elements: 1; Transistor Application: SWITCHING;
MMBF170 by Onsemi

MMBF170

Onsemi

The Onsemi MMBF170 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 5 ohm on resistance, it offers efficient performance in small outline packages.
SI2323DS-T1-GE3 by Vishay Intertechnology

SI2323DS-T1-GE3

Vishay Intertechnology

SI2323DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. Suitable for surface mount, it has a max temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
NDC7003P by National Semiconductor

NDC7003P

National Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 6;
NDS9407 by Fairchild Semiconductor

NDS9407

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDC638P by Onsemi

FDC638P

Onsemi

FDC638P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.048 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55°C to 150°C.
2N7000 by Vishay Intertechnology

2N7000

Vishay Intertechnology

Vishay Intertechnology's 2N7000 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.4W. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 150 °C.
BSR302NL6327HTSA1 by Infineon Technologies

BSR302NL6327HTSA1

Infineon Technologies

Infineon's BSR302NL6327HTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, 3.7A ID, and 0.023 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance in enhancement mode operation.
2N7002KT7G by Onsemi

2N7002KT7G

Onsemi

2N7002KT7G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.32A ID, and 1.6 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include PLASTIC/EPOXY body, GULL WING terminals, and -55 to 150 °C temp range.
JANTX2N6796 by Microsemi

JANTX2N6796

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: METAL; Reference Standard: MIL-19500; Terminal Form: WIRE;
FDC2512 by Onsemi

FDC2512

Onsemi

The Onsemi FDC2512 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.4A and 0.425 ohm drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices requiring high power dissipation.
BSS84 by Lite-on Semiconductor

BSS84

Lite-on Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 10 ohm; Terminal Form: GULL WING;
SI4532CDY-T1-GE3 by Vishay Intertechnology

SI4532CDY-T1-GE3

Vishay Intertechnology

SI4532CDY-T1-GE3 by Vishay Intertechnology is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. It operates in enhancement mode for switching applications. With max drain current of 6A, 0.047 ohm RDS(on), and 30V breakdown voltage, it's ideal for high-power circuits in small outline packages.
BSS138-G by Comchip Technology

BSS138-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
ZXM61P03FTA by Diodes Incorporated

ZXM61P03FTA

Diodes Incorporated

ZXM61P03FTA by Diodes Inc. is a P-CHANNEL FET with 30V DS breakdown voltage, 1.1A max drain current, and 0.35 ohm max on resistance. It is used for switching applications in small outline packages, featuring MOSFET technology and operating up to 150°C.
2N7002 by Dc Components

2N7002

Dc Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;