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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | UPA1603CX |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | UPA1603CX Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .87 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 16 |
Maximum Power Dissipation (Abs): | 1 W |
Terminal Position: | DUAL |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PDIP-T16 |
No. of Elements: | 4 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 85 Cel |
Maximum Drain-Source On Resistance: | 1.3 ohm |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .87 A |