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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | UPA1603CX |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | UPA1603CX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .87 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 16 |
| Maximum Power Dissipation (Abs): | 1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PDIP-T16 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 85 Cel |
| Maximum Drain-Source On Resistance: | 1.3 ohm |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .87 A |









